Cutting elements, and related earth-boring tools, supporting substrates, and methods

ABSTRACT

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A 3 XZ n-1 , where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

TECHNICAL FIELD

Embodiments of the disclosure relate to cutting elements, and to relatedearth-boring tools, structures, supporting substrates, and methods offorming the cutting elements, structures, and supporting substrates.

BACKGROUND

Earth-boring tools for forming wellbores in subterranean earthformations may include a plurality of cutting elements secured to abody. For example, fixed-cutter earth-boring rotary drill bits (“dragbits”) include a plurality of cutting elements that are fixedly attachedto a bit body of the drill bit. Similarly, roller cone earth-boringrotary drill bits may include cones that are mounted on bearing pinsextending from legs of a bit body such that each cone is capable ofrotating about the bearing pin on which it is mounted. A plurality ofcutting elements may be mounted to each cone of the drill bit. Otherearth-boring tools utilizing cutting elements include, for example, corebits, bi-center bits, eccentric bits, hybrid bits (e.g., rollingcomponents in combination with fixed cutting elements), reamers, andcasing milling tools.

The cutting elements used in such earth-boring tools often include avolume of polycrystalline diamond (“PCD”) material on a substrate.Surfaces of the polycrystalline diamond act as cutting faces of theso-called polycrystalline diamond compact (“PDC”) cutting elements. PCDmaterial is material that includes inter-bonded particles (e.g., grains,crystals) of diamond material. In other words, PCD material includesdirect, inter-granular bonds between the particles of diamond material.

PDC cutting elements are generally formed by sintering and bondingtogether relatively small diamond (synthetic, natural or a combination)particles, termed “grit,” under conditions of high temperature and highpressure in the presence of a catalyst (e.g., cobalt, iron, nickel, oralloys and mixtures thereof) to form one or more layers (e.g., a“compact” or “table”) of PCD material. These processes are oftenreferred to as high temperature/high pressure (or “HTHP”) processes. Thesupporting substrate may comprise a cermet material (i.e., aceramic-metal composite material) such as, for example, cobalt-cementedtungsten carbide. In some instances, the PCD material may be formed onthe cutting element, for example, during the HTHP process. In suchinstances, catalyst material (e.g., cobalt) in the supporting substratemay be “swept” into the diamonds during sintering and serve as acatalyst material for forming the diamond table from the diamondparticles. Powdered catalyst material may also be mixed with the diamondparticles prior to sintering the particles together in an HTHP process.In other methods, the diamond table may be formed separately from thesupporting substrate and subsequently attached thereto.

Upon formation of the diamond table using an HTHP process, catalystmaterial may remain in interstitial spaces between the inter-bondedparticles of the PDC. The presence of the catalyst material in the PDCmay contribute to thermal damage in the PDC when the PDC cutting elementis heated during use due to friction at the contact point between thecutting element and the formation. Accordingly, the catalyst material(e.g., cobalt) may be leached out of the interstitial spaces using, forexample, an acid or combination of acids (e.g., aqua regia).Substantially all of the catalyst material may be removed from the PDC,or catalyst material may be removed from only a portion thereof, forexample, from a cutting face of the PDC, from a side of the PDC, orboth, to a desired depth. However, a fully leached PDC is relativelymore brittle and vulnerable to shear, compressive, and tensile stressesthan is a non-leached PDC. In addition, it is difficult to secure acompletely leached PDC to a supporting substrate.

BRIEF SUMMARY

Embodiments described herein include cutting elements, and relatedearth-boring tools, structures, supporting substrates, and methods offorming the cutting elements, structures, and supporting substrates. Forexample, in accordance with one embodiment described herein, a cuttingelement comprises a cutting table comprising inter-bonded diamondparticles, and a thermally stable material within interstitial spacesbetween the inter-bonded diamond particles. The thermally stablematerial comprises a carbide precipitate having the general chemicalformula, A₃XZ_(n-1), where A comprises one or more of Sc, Ti, V, Cr, Mn,Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W,Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er,Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn,Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n isgreater than or equal to 0 and less than or equal to 0.75.

In additional embodiments, a method of forming a cutting elementcomprises providing a diamond-containing material comprising discretediamond particles over a substrate. The diamond-containing material issintered in the presence of a liquid phase of a homogenized alloycomprising at least one first element selected from Sc, Ti, V, Cr, Mn,Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re,Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,Yb, Lu, Ac, Th, Pa, and U, and at least one second element selected fromAl, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P to inter-bond thediscrete diamond particles. Portions of the homogenized alloy withininterstitial spaces between the inter-bonded diamond particles areconverted into a thermally stable material comprising one or morecarbide precipitates having the general chemical formula: A₃XZ_(1-n),where A comprises the at least one first element; X comprises the atleast one second element; Z comprises C; and n is greater than or equalto 0 and less than or equal to 0.75.

In further embodiments, a supporting substrate for a cutting elementcomprises a homogenized binder and WC particles dispersed in thehomogenized binder. The homogenized binder comprises C, W, at least oneelement selected from Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Y, Zr, Nb, Mo,Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd,Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and atleast one additional element selected from Al, Ga, Sn, Be, Bi, Te, Sb,Se, As, Ge, Si, B, and P.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial cut-away perspective view of a cutting element, inaccordance with embodiments of the disclosure.

FIG. 2 is a simplified cross-sectional view illustrating how amicrostructure of a cutting table of the cutting element of FIG. 1 mayappear under magnification.

FIGS. 3A and 3B are simplified cross-sectional views of a container in aprocess of forming a cutting element, in accordance with embodiments ofthe disclosure.

FIGS. 4A and 4B are simplified cross-sectional views of a container in aprocess of forming a cutting element, in accordance with additionalembodiments of the disclosure.

FIGS. 5A and 5B are simplified cross-sectional views of a container in aprocess of forming a cutting element, in accordance with furtherembodiments of the disclosure.

FIGS. 6 through 17 are side elevation views of different cuttingelements, in accordance with additional embodiments of the disclosure.

FIG. 18 is a perspective view of a bearing structure, in accordance withembodiments of the disclosure.

FIG. 19 is a perspective view of a die structure, in accordance withembodiments of the disclosure.

FIG. 20 is a perspective view of an embodiment of a fixed-cutterearth-boring rotary drill bit including a cutting element of thedisclosure.

FIG. 21 is a simplified perspective view of the lattice structure of aκ-carbide precipitate of the cutting table of the cutting element ofFIG. 1.

DETAILED DESCRIPTION

The following description provides specific details, such as specificshapes, specific sizes, specific material compositions, and specificprocessing conditions, in order to provide a thorough description ofembodiments of the present disclosure. However, a person of ordinaryskill in the art would understand that the embodiments of the disclosuremay be practiced without necessarily employing these specific details.Embodiments of the disclosure may be practiced in conjunction withconventional fabrication techniques employed in the industry. Inaddition, the description provided below does not form a completeprocess flow for manufacturing a cutting element or earth-boring tool.Only those process acts and structures necessary to understand theembodiments of the disclosure are described in detail below. Additionalacts to form a complete cutting element or a complete earth-boring toolfrom the structures described herein may be performed by conventionalfabrication processes.

Drawings presented herein are for illustrative purposes only, and arenot meant to be actual views of any particular material, component,structure, device, or system. Variations from the shapes depicted in thedrawings as a result, for example, of manufacturing techniques and/ortolerances, are to be expected. Thus, embodiments described herein arenot to be construed as being limited to the particular shapes or regionsas illustrated, but include deviations in shapes that result, forexample, from manufacturing. For example, a region illustrated ordescribed as box-shaped may have rough and/or nonlinear features, and aregion illustrated or described as round may include some rough and/orlinear features. Moreover, sharp angles that are illustrated may berounded, and vice versa. Thus, the regions illustrated in the figuresare schematic in nature, and their shapes are not intended to illustratethe precise shape of a region and do not limit the scope of the presentclaims. The drawings are not necessarily to scale. Additionally,elements common between figures may retain the same numericaldesignation.

As used herein, the terms “comprising,” “including,” “having,” andgrammatical equivalents thereof are inclusive or open-ended terms thatdo not exclude additional, unrecited elements or method steps, but alsoinclude the more restrictive terms “consisting of” and “consistingessentially of” and grammatical equivalents thereof. As used herein, theterm “may” with respect to a material, structure, feature, or method actindicates that such is contemplated for use in implementation of anembodiment of the disclosure and such term is used in preference to themore restrictive term “is” so as to avoid any implication that other,compatible materials, structures, features, and methods usable incombination therewith should or must be excluded.

As used herein, the terms “longitudinal,” “vertical,” “lateral,” and“horizontal” and are in reference to a major plane of a substrate (e.g.,base material, base structure, base construction, etc.) in or on whichone or more structures and/or features are formed and are notnecessarily defined by earth's gravitational field. A “lateral” or“horizontal” direction is a direction that is substantially parallel tothe major plane of the substrate, while a “longitudinal” or “vertical”direction is a direction that is substantially perpendicular to themajor plane of the substrate. The major plane of the substrate isdefined by a surface of the substrate having a relatively large areacompared to other surfaces of the substrate.

As used herein, spatially relative terms, such as “below,” “lower,”“bottom,” “above,” “over,” “upper,” “top,” and the like, may be used forease of description to describe one element's or feature's relationshipto another element(s) or feature(s) as illustrated in the figures.Unless otherwise specified, the spatially relative terms are intended toencompass different orientations of the materials in addition to theorientation depicted in the figures. For example, if materials in thefigures are inverted, elements described as “over” or “above” or “on” or“on top of” other elements or features would then be oriented “below” or“beneath” or “under” or “on bottom of” the other elements or features.Thus, the term “over” can encompass both an orientation of above andbelow, depending on the context in which the term is used, which will beevident to one of ordinary skill in the art. The materials may beotherwise oriented (e.g., rotated 90 degrees, inverted, flipped) and thespatially relative descriptors used herein interpreted accordingly.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

As used herein, the term “configured” refers to a size, shape, materialcomposition, material distribution, orientation, and arrangement of oneor more of at least one structure and at least one apparatusfacilitating operation of one or more of the structure and the apparatusin a predetermined way.

As used herein, the term “substantially” in reference to a givenparameter, property, or condition means and includes to a degree thatone of ordinary skill in the art would understand that the givenparameter, property, or condition is met with a degree of variance, suchas within acceptable tolerances. By way of example, depending on theparticular parameter, property, or condition that is substantially met,the parameter, property, or condition may be at least 90.0 percent met,at least 95.0 percent met, at least 99.0 percent met, at least 99.9percent met, or even 100.0 percent met.

As used herein, “about” or “approximately” in reference to a numericalvalue for a particular parameter is inclusive of the numerical value anda degree of variance from the numerical value that one of ordinary skillin the art would understand is within acceptable tolerances for theparticular parameter. For example, “about” or “approximately” inreference to a numerical value may include additional numerical valueswithin a range of from 90.0 percent to 110.0 percent of the numericalvalue, such as within a range of from 95.0 percent to 105.0 percent ofthe numerical value, within a range of from 97.5 percent to 102.5percent of the numerical value, within a range of from 99.0 percent to101.0 percent of the numerical value, within a range of from 99.5percent to 100.5 percent of the numerical value, or within a range offrom 99.9 percent to 100.1 percent of the numerical value.

As used herein, the terms “earth-boring tool” and “earth-boring drillbit” mean and include any type of bit or tool used for drilling duringthe formation or enlargement of a wellbore in a subterranean formationand include, for example, fixed-cutter bits, roller cone bits,percussion bits, core bits, eccentric bits, bi-center bits, reamers,mills, drag bits, hybrid bits (e.g., rolling components in combinationwith fixed cutting elements), and other drilling bits and tools known inthe art.

As used herein, the term “polycrystalline compact” means and includesany structure comprising a polycrystalline material formed by a processthat involves application of pressure (e.g., compaction) to theprecursor composition or materials used to form the polycrystallinematerial. In turn, as used herein, the term “polycrystalline material”means and includes any material comprising a plurality of particles(e.g., grains, crystals) of the material that are bonded directlytogether by inter-granular bonds. The crystal structures of theindividual particles of the material may be randomly oriented in spacewithin the polycrystalline material.

As used herein, the term “inter-granular bond” means and includes anydirect atomic bond (e.g., covalent, metallic, etc.) between atoms inadjacent particles of hard material.

As used herein, the term “hard material” means and includes any materialhaving a Knoop hardness value of greater than or equal to about 3,000Kg_(f)/mm² (29, 420 MPa). Non-limiting examples of hard materialsinclude diamond (e.g., natural diamond, synthetic diamond, orcombinations thereof), and cubic boron nitride.

FIG. 1 illustrates a cutting element 100 in accordance with embodimentsof the disclosure. The cutting element 100 includes a supportingsubstrate 104, and a cutting table 102 bonded to the supportingsubstrate 104 at an interface 106. The cutting table 102 may be disposeddirectly on the supporting substrate 104, and may exhibit at least onelateral side surface 108 (also referred to as the “barrel” of thecutting table 102), a cutting face 110 (also referred to as the “top” ofthe cutting table 102) opposite the interface 106 between the supportingsubstrate 104 and the cutting table 102, and at least one cutting edge112 at a periphery (e.g., outermost boundary) of the cutting face 110.

The cutting table 102 and the supporting substrate 104 may eachindividually exhibit a generally cylindrical column shape, and theinterface 106 between the supporting substrate 104 and cutting table 102may be substantially planar. A ratio of a height of the cutting element100 to an outer diameter of the cutting element 100 may be within arange of from about 0.1 to about 50, and a height (e.g., thickness) ofthe cutting table 102 may be within a range of from about 0.3millimeters (mm) to about 5 mm. Surfaces (e.g., the lateral side surface108, the cutting face 110) of the cutting table 102 adjacent the cuttingedge 112 may each be substantially planar, or one or more of thesurfaces of the cutting table 102 adjacent the cutting edge 112 may beat least partially non-planar. Each of the surfaces of the cutting table102 may be polished, or one or more of the surfaces of the cutting table102 may be at least partially non-polished (e.g., lapped, but notpolished). In addition, the cutting edge 112 of the cutting table 102may be at least partially (e.g., substantially) chamfered (e.g.,beveled), may be at least partially (e.g., substantially) radiused(e.g., arcuate), may be partially chamfered and partially radiused, ormay be non-chamfered and non-radiused. As shown in FIG. 1, in someembodiments, the cutting edge 112 is chamfered. If the cutting edge 112is at least partially chamfered, the cutting edge 112 may include asingle (e.g., only one) chamfer, or may include multiple (e.g., morethan one) chamfers (e.g., greater than or equal to two (2) chamfers,such as from two (2) chamfers to 1000 chamfers). If present, each of thechamfers may individually exhibit a width less than or equal to about0.1 inch, such as within a range of from about 0.001 inch to about 0.1inch.

FIG. 2 is an enlarged view illustrating how a microstructure of thecutting table 102 shown in FIG. 1 may appear under magnification. Thecutting table 102 includes interspersed and inter-bonded diamondparticles 114 (e.g., inter-bonded diamond particles) that form athree-dimensional (3D) network of polycrystalline diamond (PCD)material. The inter-bonded diamond particles 114 may have a multi-modalparticle size distribution. For example, as depicted in FIG. 2, thecutting table 102 may include larger diamond particles 114A (e.g.,larger diamond particles) and smaller diamond particles 114B (e.g.,smaller diamond particles). In additional embodiments, the inter-bondeddiamond particles 114 may have a mono-modal particle size distribution(e.g., the smaller diamond particles 114B may be omitted, or the largerdiamond particles 114A may be omitted). Direct inter-granular bondsbetween the larger diamond particles 114A and the smaller diamondparticles 114B are represented in FIG. 2 by dashed lines 116. The largerdiamond particles 114A may be monodisperse, wherein all the largerdiamond particles 114A exhibit substantially the same size, or may bepolydisperse, wherein the larger diamond particles 114A exhibit a rangeof sizes and are averaged. In addition, the smaller diamond particles114B may be monodisperse, wherein all the smaller diamond particles 114Bexhibit substantially the same size, or may be polydisperse, wherein thesmaller diamond particles 114B exhibit a range of sizes and areaveraged.

As shown in FIG. 2, interstitial spaces are present between theinter-bonded diamond particles 114 of the cutting table 102. Theinterstitial spaces are at least partially (e.g., substantially) filledwith a thermally stable material 118 including at least one carbideprecipitate (e.g., E2₁-type phase carbide precipitate, tetragonal P4/mmphase carbide precipitate) that is both thermally stable andmechanically stable. A standard enthalpy of formation of the carbideprecipitate of the thermally stable material 118 is less than zero(indicating that the carbide precipitate is thermally stable), and aneigenvalue from a Young's modulus calculation for the carbideprecipitate of the thermally stable material 118 is positive (indicatingthat the carbide precipitate is mechanically stable). The thermallystable material 118 may render the cutting table 102 thermally stablewithout needing to leach the cutting table 102. For example, thethermally stable material 118 may not significantly promote carbontransformations (e.g., graphite-to-diamond or vice versa) as compared toconventional cutting tables including inter-bonded diamond particlessubstantially exposed to conventional catalyst materials (e.g.,catalytic cobalt, catalytic iron, catalytic nickel) within interstitialspaces between the inter-bonded diamond particles. Accordingly, thethermally stable material 118 may render the cutting table 102 morethermally stable than conventional cutting tables.

The carbide precipitate of the thermally stable material 118 may be aperovskite compound having the general chemical formula shown below:

A₃XZ_(1-n)  (1)

wherein A comprises one or more of scandium (Sc), titanium (Ti),vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co),nickel (Ni), copper (Cu), zinc (Zn), yttrium (Y), zirconium (Zr),niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium(Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum(Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum(Pt), gold (Au), mercury (Hg), lanthanum (La), cerium (Ce), praseodymium(Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu),galodinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium(Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), actinium (Ac),thorium (Th), protoactinium (Pa), and uranium (U); X comprises one ormore of aluminum (Al), gallium (Ga), tin (Sn), beryllium (Be), bismuth(Bi), tellurium (Te), antimony (Sb), selenium (Se), arsenic (As),germanium (Ge), silicon (Si), boron (B), and phosphorus (P); Z is carbon(C); and n is greater than or equal to 0 and less than or equal to 0.75(i.e., 0≤n≤0.75).

In some embodiments, the carbide precipitate of the thermally stablematerial 118 comprises an E2₁-type phase carbide (κ-carbide) havingformula (1) above. FIG. 21 shows a simplified prespective view of thelattice structure of a κ-carbide precipitate having formula (1) above.As shown in FIG. 21, sites of “A” elements (“A sites”) are at facecentered (½, ½, 0) positions in the lattice structure of the κ-carbideprecipitate; sites of “X” elements (“X sites”) are at cube corner (0, 0,0) positions in the lattice structure of the κ-carbide precipitate, andsites of “Z” elements or vacancies (i.e., vacancies corresponding toembodiments where 0<n≤0.75 in formula (1) above) (“Z sites”) are locatedat body centered (½, ½, 0) positions in the lattice structure of theκ-carbide precipitate.

In additional embodiments, the carbide precipitate of thermally stablematerial 118 comprises a non-κ-carbide precipitate having formula (1)above. By way of non-limiting example, the carbide precipitate of thethermally stable material 118 may comprise a tetragonal P4/mm phasecarbide precipitate having formula (1) above, such as Co₃GeC_(0.25). Itwas unexpectedly discovered that Co₃GeC_(0.25), a tetragonal P4/mm phasecarbide precipitate, exhibits enhanced stability properties (e.g.,thermal stability properties, mechanical stability properites) relativeto Co₃GeC, a κ-carbide precipitate. The thermally stable material 118may include one or more non-κ-carbide precipitates in addition to or inplace of one or more κ-carbide precipitates.

The carbide precipitate (e.g., κ-carbide precipitate, non-κ-carbideprecipitate) of the thermally stable material 118 includes at leastthree different elements. For example, the carbide precipitate may be aternary (e.g., triple element) carbide precipitate (e.g., a tenaryκ-carbide precipitate, a tenary non-κ-carbide precipitate) including asingle (e.g., only one) first element (e.g., Sc, Ti, V, Cr, Mn, Fe, Co,Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os,Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,Lu, Ac, Th, Pa, or U) occupying all A sites in the lattice structure ofthe carbide precipitate; a single second element (e.g., Al, Ga, Sn, Be,Bi, Te, Sb, Se, As, Ge, Si, B, or P) occupying all X sites in thelattice structure of the carbide precipitate; and a single third element(e.g., C) occupying at least some (e.g., all, less than all) Z sites inthe lattice structure of the carbide precipitate. In additionalembodiments, the carbide precipitate of the thermally stable material118 includes more than three different elements (e.g., at least fourdifferent elements). By way of non-limiting example, the carbideprecipitate of the thermally stable material 118 may comprise aquaternary (e.g., quadruple element) carbide precipitate (e.g., aquaternary κ-carbide precipitate, a quaternary non-κ-carbideprecipitate). The quaternary carbide precipitate may, for example,include a single (e.g., only one) first element (e.g., one of Sc, Ti, V,Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf,Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy,Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U) occupying A sites in the latticestructure of the carbide precipitate, two different second elements(e.g., two of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P)occupying X sites in the lattice structure of the carbide precipitate,and a single third element (e.g., C) occupying at least some (e.g., all,less than all) Z sites in the lattice structure of the carbideprecipitate; or may include two different first elements (e.g., two ofSc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd,Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu,Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U) occupying A sites inthe lattice structure of the carbide precipitate, a single (e.g., onlyone) second element (e.g., one of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As,Ge, Si, B, and P) occupying X sites in the lattice structure of thecarbide precipitate, and a single element (e.g., C) occupying at leastsome (e.g., all, less than all) Z sites in the lattice structure of thecarbide precipitate. C may render carbide precipitates of the thermallystable material 118 stable at ambient pressure and temperatureconditions.

By way of non-limiting example, the thermally stable material 118 mayinclude one or more ternary carbide precipitates (e.g., tenary κ-carbideprecipitates, tenary non-κ-carbide precipitates) selected fromSm₃SnC_(1-n), Sm₃BiC_(1-n), Sm₃TeC_(1-n), Sm₃PC_(1-n), Sm₃SiC_(1-n),Sm₃GaC_(1-n), Sc₃SnC_(1-n), Sc₃GeC_(1-n), Sc₃SbC_(1-n), Sc₃AsC_(1-n),Sm₃BeC_(1-n), Sc₃PC_(1-n), Sc₃SiC_(1-n), Y₃SnC_(1-n), Sc₃BiC_(1-n),Tm₃SnC_(1-n), Er₃SnC_(1-n), Sc₃TeC_(1-n), Y₃SbC_(1-n), Sc₃SeC_(1-n),Ho₃SnC_(1-n), Sc₃GaC_(1-n), Dy₃SnC_(1-n), Y₃BiC_(1-n), Tb₃SnC_(1-n),Tm₃SbC_(1-n), Er₃SbC_(1-n), Lu₃SbC_(1-n), Lu₃GeC_(1-n), Ti₃GaC_(1-n),Ti₃GeC_(1-n), Gd₃SnC_(1-n), Tb₃SbC_(1-n), Y₃GeC_(1-n), Er₃BiC_(1-n),Ho₃BiC_(1-n), Tm₃BiC_(1-n), Lu₃AsC_(1-n), Tm₃GeC_(1-n), Dy₃BiC_(1-n),Lu₃BiC_(1-n), Tm₃AsC_(1-n), Tb₃BiC_(1-n), Ti₃SnC_(1-n), Er₃AsC_(1-n),Y₃TeC_(1-n), Gd₃BiC_(1-n), Ce₃TeC_(1-n), Ti₃AlC_(1-n), Zr₃SnC_(1-n),Dy₃AsC_(1-n), La₃BiC_(1-n), Sc₃AlC_(1-n), Yb₃SeC_(1-n), Tb₃AsC_(1-n),Lu₃PC_(1-n), Yb₃TeC_(1-n), Lu₃SnC_(1-n), Eu₃SeC_(1-n), Er₃TeC_(1-n),Ti₃SbC_(1-n), Lu₃SiC_(1-n), Tm₃TeC_(1-n), Tm₃PC_(1-n), Gd₃TeC_(1-n),Gd₃AsC_(1-n), Zr₃SbC_(n-1), Lu₃GaC_(1-n), Er₃PC_(1-n), Sm₃BC_(1-n-1),Lu₃TeC_(1-n), Ho₃PC_(1-n-1), Tm₃SiC_(1-n), Er₃SiC_(1-n), Dy₃PC_(1-n),Tm₃GaC_(1-n), Ce₃AsC_(1-n), Y₃GaC_(1-n), Ho₃SiC_(1-n), Tb₃PC_(1-n),Er₃GaC_(1-n), Dy₃SiC_(1-n), Eu₃BiC_(1-n), Hf₃GaC_(1-n), Ho₃GaC_(1-n),Gd₃PC_(1-n), Gd₃SnC_(1-n), Lu₃AlC_(1-n), Ce₃SnC_(1-n), Tb₃SiC_(1-n),Hf₃SnC_(1-n), Dy₃GaC_(1-n), Tm₃AlC_(1-n), Gd₃SiC_(1-n), Ti₃BiC_(1-n),Tb₃GaC_(1-n), Er₃AlC_(1-n), Yb₃BiC_(1-n), Yb₃SbC_(1-n), La₃PC_(1-n),Eu₃AsC_(1-n), Fe₃AlC_(1-n), Ho₃AlC_(1-n), Gd₃GaC_(1-n), Yb₃AsC_(1-n),Th₃BiC_(1-n), Ac₃SbC_(1-n), Th₃SnC_(1-n), Tb₃AlC_(1-n), Eu₃PC_(1-n),Fe₃SiC_(1-n), Ti₃BeC_(1-n), Yb₃PC_(1-n), Gd₃AlC_(1-n), Hf₃PC_(1-n),V₃SiC_(1-n), Ce₃SiC_(1-n), V₃GeC_(1-n), Fe₃GaC_(1-n), Rh₃AlC_(1-n),Th₃GeC_(1-n), V₃AlC_(1-n), Fe₃GeC_(1-n), V₃GaC_(1-n), Th₃PC_(1-n),V₃PC_(1-n), V₃SnC_(1-n), Fe₃SnC_(1-n), Zr₃BeC_(1-n), Hf₃BeC_(1-n),Nb₃GaC_(1-n), Sc₃BeC_(1-n), Th₃AlC_(1-n), V₃SbC_(1-n), Ce₃AlC_(1-n),Co₃AlC_(1-n), V₃AsC_(1-n), Ni₃AlC_(1-n), Co₃GaC_(1-n), Ti₃BC_(1-n),Rh₃GaC_(1-n), Fe₃SbC_(1-n), Fe₃SbC_(1-n), Sc₃BC_(1-n), U₃PC_(1-n),Fe₃PC_(1-n), Co₃SiC_(1-n), Hf₃BiC_(1-n), V₃BeC_(1-n), V₃TeC_(1-n),Ni₃GaC_(1-n), Lu₃BeC_(1-n), Mn₃AlC_(1-n), Ru₃AlC_(1-n), Fe₃AsC_(1-n),Ta₃SnC_(1-n), Mn₃SiC_(1-n), V₃SeC_(1-n), U₃SeC_(1-n), Co₃SnC_(1-n),Co₃BeC_(1-n), Co₃GeC_(1-n), U₃SiC_(1-n), Cr₃SiC_(1-n), V₃BiC_(1-n),Tc₃AlC_(1-n), La₃SiC_(1-n), Rh₃SnC_(1-n), Cr₃AlC_(1-n), U₃AsC_(1-n),Mn₃GaC_(1-n), Th₃SiC_(1-n), Rh₃BeC_(1-n), Ni₃BeC_(1-n), Mn₃GeC_(1-n),Cr₃GeC_(1-n), Pd₃AlC_(1-n), and Cr₃GaC_(1-n), wherein 0≤n≤0.75.

In some embodiments, the thermally stable material 118 includes one ormore carbide precipitates (e.g., ternary κ-carbide precipitates, ternarynon-κ-carbide precipitates, quaternary κ-carbide precipitates, and/orquaternary non-κ-carbide precipitates) free of (i.e., not including) Co.All of the carbide precipitates of the thermally stable material 118 maybe free of Co, or less than all of the the carbide precipitates of thethermally stable material 118 may be free of Co. In additionalembodiments, the thermally stable material 118 includes one or morecarbide precipitates (e.g., ternary κ-carbide precipitates, ternarynon-κ-carbide precipitates, quaternary κ-carbide precipitates, and/orquaternary non-κ-carbide precipitates) free of (i.e., not including) Ni.All of the carbide precipitates of the thermally stable material 118 maybe free of Ni, or less than all of the the carbide precipitates of thethermally stable material 118 may be free of Ni. In further embodiments,the thermally stable material 118 includes one or more carbideprecipitates (e.g., ternary κ-carbide precipitates, ternarynon-κ-carbide precipitates, quaternary κ-carbide precipitates, and/orquaternary non-κ-carbide precipitates) free of (i.e., not including) Fe.All of the carbide precipitates of the thermally stable material 118 maybe free of Fe, or less than all of the the carbide precipitates of thethermally stable material 118 may be free of Fe. In still furtherembodiments, all of carbide precipitates of the the thermally stablematerial 118 are free of (i.e., do not include) Co, Fe, and Ni.

In addition to carbide precipitates (e.g., κ-carbide precipitates,non-κ-carbide precipitates) having formula (1) above, the thermallystable material 118 of the cutting table 102 may include one or moreintermetallic compound phase precipitates. As a non-limiting example,the thermally stable material 118 may include one or more of FCC L1₂phase (e.g., gamma prime (γ′) phase) precipitates, FCC DO₂₂ phaseprecipitates, D8₅ phase precipitates, DO₁₉ phase precipitates, andBCC/B2 phase precipitates. In some embodiments, the thermally stablematerial 118 of the cutting table 102 is formed of and includes carbideprecipitate(s) having formula (1) above and FCC L1₂ phase precipitates.The thermally stable material 118 of the cutting table 102 may alsoinclude other precipitates formed of and including elements of thecarbide precipitates having formula (1) above. By way of non-limitingexample, the thermally stable material 118 may include, other beta (β)phase precipitates (e.g., β phase precipitates not having B2 ordering ona BCC parent crystal structure), FCC L1₀ phase (e.g., gamma (γ) phase)precipitates, and/or other carbide precipitates not having formula (1)above (e.g., WC precipitates; M_(x)C precipitates, where x>2 and Mcomprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr,Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La,Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, andU).

As shown in FIG. 2, the thermally stable material 118 may at leastpartially (e.g., substantially) coat (e.g., cover) surfaces of theinter-bonded diamond particles 114 of the cutting table 102. Thethermally stable material 118 may be located directly on the surfaces ofthe inter-bonded diamond particles 114 of the cutting table 102, and mayat least partially impede (e.g., substantially prevent) back-conversionof the inter-bonded diamond particles 114 to other forms or phases ofcarbon (e.g., graphitic carbon, amorphous carbon, etc.). In someembodiments, substantially all catalytic elements adjacent theinter-bonded diamond particles 114 of the cutting table 102 arepartitioned (e.g., incorporated) into carbide precipitates (e.g.,κ-carbide precipitates, non-κ-carbide precipitates) having formula (1)above and/or other precipitates (e.g., FCC L1₂ phase precipitates; FCCDO₂₂ phase precipitates; D8₅ phase precipitates; DO₁₉ phaseprecipitates; BCC/B2 phase precipitates; other β phase precipitates; FCCL1₀ phase precipitates; other carbide precipitates not having formula(1) above). Accordingly, otherwise catalytic elements of the thermallystable material 118 may not catalyze reactions that decompose theinter-bonded diamond particles 114 during normal use and operation ofthe cutting table 102. In additional embodiments, one or more unreactedcatalytic elements may be present within the thermally stable material118. However, the particle sizes and distributions of the carbideprecipitates having formula (1) above and/or other precipitates may becontrolled to limit the exposure of the inter-bonded diamond particles114 of the cutting table 102 to such unreacted catalytic elements.

The cutting table 102 may exhibit enhanced abrasion resistance andthermal stability up to a melting temperature or theoretical diamondstability temperature, at or near atmospheric conditions, whichever islower, of the thermally stable material 118. For example, if the meltingtemperature of the thermally stable material 118 is about 1,200° C., thecutting table 102 may be thermally and physically stable at temperatureswithin a range from about 1,000° C. to about 1,100° C., whichcorresponds to the theoretical limit of diamond stability under or nearatmospheric conditions (assuming no oxidation occurs). The thermallystable material 118 within interstitial spaces between the inter-bondeddiamond particles 114 of the cutting table 102 may be thermodynamicallystable at ambient pressure and temperatures, as well as at temperaturesand pressures experienced, for example, during downhole drilling. Thethermally stable material 118 may render the cutting table 102 thermallystable without having to remove (e.g., leach) material from theinterstitial spaces of the cutting table 102.

With returned reference to FIG. 1, the material composition of thesupporting substrate 104 may at least partially depend on themethodology (e.g., process) employed to form the cutting table 102 ofthe cutting element 100. For example, in some embodiments, thesupporting substrate 104 includes tungsten carbide (WC) particlesdispersed within a homogenized binder formed of and including elementsof the thermally stable material 118 (FIG. 2) of the cutting table 102.The homogenized binder may, for example, comprise a substantiallyhomogeneous alloy (e.g., a substantially homogeneous peritectic alloy)of the elements included in the thermally stable material 118 (e.g., theelements included in the carbide precipitate(s) of the thermally stablematerial 118 having formula (1) above) of the cutting table 102. Thehomogenized binder of the supporting substrate 104 may be employed(e.g., diffused from the supporting substrate 104 into adiamond-containing material adjacent the supporting substrate 104) toform the cutting table 102 (including the thermally stable material 118(FIG. 2) thereof) during the formation of the cutting element 100, asdescribed in further detail below with reference to FIGS. 3A and 3B. Inadditional embodiments, the supporting substrate 104 may have adifferent material composition, such as a material composition free ofone or more of the elements present in the thermally stable material 118of the cutting table 102 (e.g., free of one or more of the elementsincluded in the carbide precipitate(s) of the thermally stable material118 having formula (1) above). In such embodiments, such omittedelements may be obtained from one or more different sources (e.g., oneor more sources other than the supporting substrate 104) during theformation of the cutting table 102 (including the thermally stablematerial 118 (FIG. 2) thereof) and the cutting element 100. For example,one or more of the elements included in the thermally stable material118 (FIG. 2) (e.g., one or more of the elements included in the carbideprecipitate(s) of the thermally stable material 118 having formula (1)above) of the cutting table 102 may be obtained from discrete alloyparticles included in a diamond-containing material adjacent thesupporting substrate 104 during the formation of the cutting element100, as described in further detail below with reference to FIGS. 4A and4B. As another example, one or more of the elements included in thethermally stable material 118 (FIG. 2) (e.g., one or more of theelements included in the carbide precipitate(s) of the thermally stablematerial 118 having formula (1) above) of the cutting table 102 may beobtained from additional structures (e.g., foils, plates, shims, meshes,films, layers) provided adjacent at least a diamond-containing materialemployed to form the cutting table 102 during the formation of thecutting element 100, as described in further detail below with referenceto FIGS. 5A and 5B.

An embodiment of a method of forming the cutting element 100 will now bedescribed with reference to FIGS. 3A and 3B, which illustrate simplifiedcross-sectional views of a container 300 in a process of forming thecutting element 100 shown in FIG. 1. With the description providedbelow, it will be readily apparent to one of ordinary skill in the artthat the methods described herein may be used in various devices. Inother words, the methods of the disclosure may be used whenever it isdesired to form a thermally stable structure, such as a thermally stablecutting table (e.g., a thermally stable diamond table, such as athermally stable PDC), for an earth-boring tool.

Referring to FIG. 3A, a diamond-containing material 301 may be providedwithin the container 300, and a supporting substrate 304 may be provideddirectly on the diamond-containing material 301. The container 300 maysubstantially surround and hold the diamond-containing material 301 andthe supporting substrate 304. As shown in FIG. 3A, the container 300 mayinclude an inner cup 308 in which the diamond-containing material 301and a portion of the supporting substrate 304 may be disposed, a bottomend piece 306 in which the inner cup 308 may be at least partiallydisposed, and a top end piece 310 surrounding the supporting substrate304 and coupled (e.g., swage bonded) to one or more of the inner cup 308and the bottom end piece 306. In additional embodiments, the bottom endpiece 306 may be omitted (e.g., absent).

The diamond-containing material 301 (e.g., diamond powder) may be formedof and include discrete diamond particles (e.g., discrete naturaldiamond particles, discrete synthetic diamond particles, combinationsthereof, etc.). The discrete diamond particles may individually exhibita desired particle size. The discrete diamond particles may comprise,for example, one or more of micro-sized diamond particles and nano-sizeddiamond particles. In addition, each of the discrete diamond particlesmay individually exhibit a desired shape, such as at least one of aspherical shape, a hexahedral shape, an ellipsoidal shape, a cylindricalshape, a conical shape, or an irregular shape. In some embodiments, eachof the discrete diamond particles of the diamond-containing material 301exhibits a substantially spherical shape. The discrete diamond particlesmay be monodisperse, wherein each of the discrete diamond particlesexhibits substantially the same material composition, size, and shape,or may be polydisperse, wherein at least one of the discrete diamondparticles exhibits one or more of a different material composition, adifferent particle size, and a different shape than at least one otherof the discrete diamond particles. The diamond-containing material 301may be formed by conventional processes, which are not described herein.

The supporting substrate 304 comprises a consolidated structureincluding WC particles dispersed within a homogenized binder (e.g., asubstantially homogeneous alloy, such as a substantially homogeneousperitectic alloy) comprising at least one first element selected fromSc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd,Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd,Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; at least one secondelement selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, andP; C; and W. The homogenized binder may, for example, comprise fromabout 35 weight percent (wt %) to about 95 wt % of the first element;from about 2.0 wt % to about 60 wt % of the second element; from about0.1 wt % C to about 10 wt % C; and a remainder of W. In someembodiments, the homogenized binder is substantially free of Co. Inadditional embodiments, the homogenized binder is substantially free ofNi. In further embodiments, the homogenized binder is substantially freeof Fe. In still further embodiments, the homogenized binder issubstantially free of each of Co, Ni, and Fe. The supporting substrate304 may include from about 80 wt % to about 95 wt % of the WC particles,and from about 5 wt % to about 20 wt % of the homogenized binder. Insome embodiments, the supporting substrate 304 includes about 88 wt % WCparticles, and about 12 wt % of a homogenized binder comprising thefirst element (e.g., one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au,Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th,Pa, and U), the second element (e.g., one or more of Al, Ga, Sn, Be, Bi,Te, Sb, Se, As, Ge, Si, B, and P); C; and W. The homogenized binder ofthe supporting substrate 304 may have a liquidus temperature greaterthan or equal to about 750° C., such as within a range of from about750° C. to about 1500° C., or from about 1000° C. to about 1500° C. Asdescribed in further detail below, the homogenized binder of thesupporting substrate 304 may be employed to convert the discrete diamondparticles of the diamond-containing material 301 into inter-bondeddiamond particles.

As described in further detail below, the supporting substrate 304 maybe formed through a multi-step process that includes forming a precursorcomposition, and then consolidating the precursor composition. With thedescription as provided below, it will be readily apparent to one ofordinary skill in the art that the methods described herein in relationto the formation of the supporting substrate 304 may be used in variousapplications. The methods described herein may be used whenever it isdesired to form a consolidated structure including particles of a hardmaterial (e.g., WC particles) dispersed in a homogenized binder.

The process of forming a precursor composition includes combining (e.g.,mixing) a preliminary powder with a WC powder, a binding agent, and,optionally, one or more additive(s) to form a precursor composition. Thepreliminary powder may include at least one first element selected fromSc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd,Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd,Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, at least one secondelement selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, andP, and at least one third element selected from C and W. In someembodiments, the preliminary powder is substantially free of Co. Inadditional embodiments, the preliminary powder is substantially free ofNi. In further embodiments, the preliminary powder is substantially freeof Fe. In still further embodiments, the preliminary powder issubstantially free of each of Co, Ni, and Fe. The preliminary powdermay, for example, comprise discrete alloy particles each individuallyincluding the first element, the second element, and the third element;and/or may comprise discrete elemental (e.g., non-alloy) particles(e.g., discrete elemental particles of the first element, discreteelemental particles of the second element, and/or discrete elementalparticles of third element). During the process of forming the precursorcomposition, the discrete particles (e.g., discrete alloy particlesand/or discrete elemental particles) of the preliminary powder may bedistributed relative to the discrete WC particles of the WC powder andthe additive(s) (if any) so as to facilitate the formation of aconsolidated structure (e.g., a supporting substrate) able to effectuatethe formation of a cutting element including a thermally stable cuttingtable (e.g., a thermally stable PDC table), as described in furtherdetail bellow.

The preliminary powder may include any amounts of the first element(e.g., one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb,Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr,Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U), thesecond element (e.g., one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As,Ge, Si, B, and P), and the third element (e.g., one or more of C and W)able to facilitate the formation of a consolidated structure formed ofand including WC particles and a homogenized binder including desiredamounts of the first element, the second element, C, and W through thesubsequent consolidation process. Accordingly, amounts of one or more ofthe first element, the second element, and the third element in thepreliminary powder (e.g., as effectuated by the formulations andrelative amounts of the discrete alloy particles and/or the discreteelemental particles thereof) may be selected at least partially based onamounts of W and C in the WC powder (e.g., as effectuated by theformulations and relative amounts of the discrete WC particles thereof)facilitating the formation of the homogenized binder of the consolidatedstructure. In turn, as described in further detail below, a materialcomposition of the homogenized binder may be selected at least partiallybased on desired melting properties of the homogenized binder, ondesired catalytic properties of the homogenized binder for the formationof a compact structure (e.g., a cutting table, such as a PDC table)including inter-bonded diamond particles, and on desired stabilityproperties (e.g., thermal stability properties, mechanical stabilityproperties) of the compact structure effectuated by the formation of athermally stable material (e.g., the thermally stable material 118previously described with reference to FIG. 2) from portions of thehomogenized binder remaining within interstitial spaces between theinter-bonded diamond particles (e.g., the inter-bonded diamond particles114 of the cutting table 102 previously described with reference to FIG.2) following the formation thereof.

In some embodiments, the preliminary powder includes from about 60 wt %to about to 98.75 wt % of the first element (e.g., one or more of Sc,Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag,Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd,Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U), from about 2 wt % toabout 40 wt % of the second element (e.g., one or more of Al, Ga, Sn,Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P); and from about 0.25 wt % toabout 2.0 wt % of the third element (e.g., one or more of W and C).Relatively higher concentrations of the second element may enhance thesuppression of undesirable reactions (e.g., binary carbide formingreactions) between the first element and C during the formation of acompact structure (e.g., a cutting table, such as a PDC table) using aliquid phase of a homogenized binder subsequently formed from theprecursor composition, enhancing the catalytic properties (e.g., carbonsolubility and liquid phase transport) of the first element for theformation of inter-bonded diamond particles. By way of non-limitingexample, if the first element comprises an element (e.g., Y, Ti, Zr, Hf,V, Nb, Ta, Cr, Mo, W) that is highly reactive with C to form a binarycarbide (e.g., YC, TiC, ZrC, HfC, VC, NbC, TaC, CrC, MoC, WC), thesecond element may suppress reactions between the first element and Cthat would otherwise form the binary carbide so as to permit the firstelement to act as a catalyst for the formation of inter-bonded diamondparticles during a sintering process at or above the liquidustemperature of the homogenized binder. Relatively higher concentrationsof the second element may also enhance thermal stability properties of acompact structure (e.g., a cutting table, such as a PDC table) formedusing the liquid phase of the homogenized binder, but may also increaseand/or widen the melting temperature range of the homogenized binder ascompared to homogenized binders having relatively lower concentrationsof the second element. Even if the first element comprises an element(e.g., Co, No, Ag, Cu, Au, Pt, Tc) that is not highly reactive with C toform a binary carbide, the second element may enhance the stabilityproperties (e.g., thermal stability properties, mechanical stabilityproperties) of the compact structure (e.g., a cutting table, such as aPDC table) by facilitating the formation of carbide precipitates (e.g.,κ-carbide precipitates, non-κ-carbide precipitates) having formula (1)above through the sintering process. In addition, relatively higherconcentrations of C in the preliminary powder may enhance thermalstability properties of the compact structure formed using the liquidphase of homogenized binder through the formation of carbideprecipitates, but may also modify (e.g., suppress) the meltingcharacteristics of the homogenized binder by modifying the melting andsolidification paths toward monovariant and invariant reaction lines.

If the preliminary powder includes two or more of the second elements(e.g., two or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, andP), the preliminary powder may include substantially the same weightpercentage of each of the two or more of the second elements; or mayinclude a different weight percentage of at least one of the two or moreof the second elements than at least one other of the two or more of thesecond elements. In addition, if the preliminary powder includes two ormore of the first elements (e.g., two or more of Sc, Ti, V, Cr, Mn, Fe,Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re,Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,Yb, Lu, Ac, Th, Pa, and U), the preliminary powder may includesubstantially the same weight percentage of each of the two or more ofthe first elements; or may include a different weight percentage of atleast one of the two or more of the first elements than at least oneother of the two or more of the first elements.

In some embodiments, the material composition of the preliminary powderis selected relative to the material composition of WC powder tofacilitate the subsequent formation of a homogenized binder includingamounts of the first element (e.g., one or more of Sc, Ti, V, Cr, Mn,Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re,Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,Yb, Lu, Ac, Th, Pa, and U), the second element (one or more of Al, Ga,Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P), C, and W facilitating theformation of a compact structure (e.g., cutting table, PDC table)including inter-bonded diamond particles using a liquid phase of thehomogenized binder. The amounts of at least the first element and thesecond element in the preliminary powder may, for example, be selectedsuch that the second element minimizes (e.g., substantially limits)reactions (e.g., binary carbide forming reactions) between the firstelement and carbon of discrete diamond particles that may otherwisesubstantially preclude the first element from being able to catalyze theformation of inter-bonded diamond particles from the discrete diamondparticles using a liquid phase of the homogenized binder. In someembodiments, amounts of the second element are selected relative toamounts of the first element such that substantially none of the firstelement reacts with C to form a binary carbide upon infiltration (e.g.,diffusion) of a liquid phase of the homogenized binder into thediamond-containing material 301 during subsequent HTHP processing toconvert the discrete diamond particles of the diamond-containingmaterial 301 into inter-bonded diamond particles. Accordingly,substantially all of the first element included within the liquid phaseof the homogenized binder may catalyze the formation of the inter-bondeddiamond particles. Amounts of the first element, the second element, andthe third element (e.g., one or more of W and C) in the preliminarypowder may be selected to permit a melting temperature range of thehomogenized binder to be within a temperature range suitable forthermally treating (e.g., sintering) the diamond-containing material 301to form the compact structure. In some embodiments, the preliminarypowder includes about 86 wt % of the first element, and about 13 wt % ofthe second element.

In additional embodiments, the material composition of the preliminarypowder is selected relative to the material compositions of the WCpowder to facilitate the subsequent formation of a homogenized binderhaving a relatively lower melting temperature range and/or relativelynarrower melting temperature range than a homogenized binder formulatedto minimize (e.g., substantially limit) reactions (e.g., binary carbideforming reactions) between the first element and carbon of discretediamond particles that may otherwise substantially preclude the firstelement from being able to catalyze the formation of inter-bondeddiamond particles from discrete diamond particles using a liquid phaseof the homogenized binder. For example, amounts of the second element(e.g., one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, andP) of the preliminary powder may be selected relative to amounts of thefirst element (e.g., one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au,Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th,Pa, and U) such that less than all of the first element is impeded(e.g., precluded) from reacting with C to form a binary carbide uponinfiltration (e.g., diffusion) of a liquid phase of the homogenizedbinder into the diamond-containing material 301 during subsequent HTHPprocessing to convert the discrete diamond particles of thediamond-containing material 301 into inter-bonded diamond particles. Amajority (e.g., greater than or equal to 70 percent but less than 100percent, greater than or equal to 80 percent but less than 100 percent,greater than or equal to 90 percent but less than 100 percent, greaterthan or equal to 95 percent but less than 100 percent) of the firstelement may catalyze the formation of the inter-bonded diamondparticles, but at least a portion of the first element may react with Cto form a binary carbide upon infiltration of the liquid phase of thehomogenized binder into the diamond-containing material 301.Accordingly, a compact structure (e.g., cutting table, PDC table) formedusing the liquid phase of the homogenized binder may include binarycarbides within interstitial spaces between inter-bonded diamondparticles thereof. In some embodiments, the preliminary powder includesabout 89 wt % Co; about 9.2 wt % of one or more of Al, Ga, Sn, Be, Ge,and Si; and about 0.8 wt % C.

In some embodiments, at least some (e.g., all) of the discrete particlesof the preliminary powder comprise discrete alloy particles individuallyformed of and including an alloy including at least one first elementselected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc,Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm,Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, at least onesecond element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si,B, and P, and at least one third element selected from C and W. Each ofthe discrete alloy particles may include substantially the same elementsand element ratios of as each other of the discrete alloy particles, orone or more of the discrete alloy particles may include differentelements and/or different element ratios than one or more other of thediscrete alloy particles, so long as the preliminary powder as a wholeincludes desired and predetermined ratios of the first element, thesecond element, and the third element. In some embodiments, thepreliminary powder is formed of and includes discrete alloy particleshaving substantially the same amounts of one or more of the firstelement, the second element, and the third element as one another. Inadditional embodiments, the preliminary powder is formed of and includesdiscrete alloy particles having different amounts of the first element,the second element, and/or the third element than one another.

If included in the preliminary powder, the discrete alloy particles maybe formed by conventional processes (e.g., ball milling processes,attritor milling processes, cryomilling processes, jet millingprocesses, powder atomization processes, etc.), which are not describedherein. As a non-limiting example, an initial powder formed of andincluding particles of the first element (e.g., one or more of Sc, Ti,V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd,Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy,Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U), the second element (e.g., one ormore of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P), and thethird element (e.g., one or more of C and W), alloys thereof, and/orcombinations thereof may be provided into an attritor mill containingmixing structures (e.g., mixing spheres, mixing bars, etc.), and maythen be subjected to a mechanical alloying process until the discretealloy particles are formed. During the mechanical alloying processcollisions between the mixing structures and the initial powder maycause particles of different materials to fracture and/or be welded orsmeared together. Relatively larger particles may fracture during themechanical welding process and relatively smaller particles may weldtogether, eventually forming discrete alloy particles each individuallycomprising a substantially homogeneous mixture of the constituents ofthe initial powder in substantially the same proportions of the initialpowder. As another non-limiting example, an alloy material may be formedby conventional melting and mixing processes, and then the alloymaterial may be formed into the discrete alloy particles by one or moreconventional atomization processes.

In additional embodiments, at least some (e.g., all) of the discreteparticles of the preliminary powder comprise discrete elementalparticles, such as first discrete elemental particles individuallyformed a single (e.g., only one) first element selected from Sc, Ti, V,Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf,Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,Er, Tm, Yb, Lu, Ac, Th, Pa, and U; second discrete elemental particlesindividually formed of a single (e.g., only one) second element selectedfrom Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; and/or thirddiscrete elemental particles individually formed of a single (e.g., onlyone) element selected from C (e.g., discrete graphite particles,discrete graphene particles, discrete fullerene particles, discretecarbon nanofibers, discrete carbon nanotubes, etc.) and W. Thepreliminary powder may include any amounts of the discrete elementalparticles permitting the preliminary powder as a whole to includedesired and predetermined ratios of one or more of the first element,the second element, and the third element. If included in thepreliminary powder, the discrete elemental particles may be formed byconventional processes (e.g., conventional milling processes), which arenot described herein.

The preliminary powder may include discrete alloy particles but may besubstantially free of discrete elemental particles; may include discreteelemental particles but may be substantially free of discrete alloyparticles; or may include a combination of discrete alloy particles anddiscrete elemental particles. In some embodiments, the preliminarypowder only includes discrete alloy particles. In additionalembodiments, the preliminary powder only includes discrete elementalparticles. In further embodiments, the preliminary powder includes acombination of discrete alloy particles and discrete elementalparticles.

Each of the discrete particles (e.g., discrete alloy particles and/ordiscrete elemental particles) of the preliminary powder may individuallyexhibit a desired particle size, such as a particle size less than orequal to about 1000 micrometers (μm). The discrete particles maycomprise, for example, one or more of discrete micro-sized particles anddiscrete nano-sized particles. As used herein, the term “micro-sized”means and includes a particle size with a range of from about one (1) μmto about 1000 μm, such as from about 1 μm to about 500 μm, from about 1μm to about 100 μm, or from about 1 μm to about 50 μm. As used herein,the term “nano-sized” means and includes a particle size of less than 1μm, such as less than or equal to about 500 nanometers (nm), or lessthan or equal to about 250 nm. In addition, each of the discreteparticles may individually exhibit a desired shape, such as one or moreof a spherical shape, a hexahedral shape, an ellipsoidal shape, acylindrical shape, a conical shape, or an irregular shape.

The discrete particles (e.g., discrete alloy particles and/or discreteelemental particles) of the preliminary powder may be monodisperse,wherein each of the discrete particles exhibits substantially the samesize and substantially the same shape, or may be polydisperse, whereinat least one of the discrete particles exhibits one or more of adifferent particle size and a different shape than at least one other ofthe discrete particles. In some embodiments, the discrete particles ofthe preliminary powder have a multi-modal (e.g., bi-modal, tri-modal,etc.) particle (e.g., particle) size distribution. For example, thepreliminary powder may include a combination of relatively larger,discrete particles and relatively smaller, discrete particles. Themulti-modal particle size distribution of the preliminary powder may,for example, provide the precursor composition with desirable particlepacking characteristics for the subsequent formation of a consolidatedstructure (e.g., supporting substrate) therefrom, as described infurther detail below. In additional embodiments, the preliminary powderhas a mono-modal particle size distribution. For example, all of thediscrete particles of the preliminary powder may exhibit substantiallythe same particle size.

The WC particles of the WC powder may include stoichiometric quantitiesor near stoichiometric quantities of W and C. Relative amounts of W andC in the discrete WC particles may be selected at least partially basedon amounts and material compositions of the discrete particles of thepreliminary powder, the discrete WC particles, and the additive(s) (ifany) facilitating the formation of a consolidated structure (e.g.,supporting substrate) formed of and including WC particles and ahomogenized binder including desirable and predetermined amounts of atleast one first element selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt,Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac,Th, Pa, and U; at least one second element selected from Al, Ga, Sn, Be,Bi, Te, Sb, Se, As, Ge, Si, B, and P; C; and W through the subsequentconsolidation process. In some embodiments, each of the discrete WCparticles of the WC powder includes stoichiometric amounts of W and C.In additional embodiments, one or more of the discrete WC particles ofthe WC powder includes an excess amount of C than that stoiciometricallyrequired to form WC. In further embodiments, one or more of the discreteWC particles of the WC powder includes an excess amount of W than thatstoiciometrically required to form WC.

Each of the discrete WC particles of the WC powder may individuallyexhibit a desired particle size, such as a particle size less than orequal to about 1000 μm. The discrete WC particles may comprise, forexample, one or more of discrete micro-sized WC particles and discretenano-sized WC particles. In addition, each of the discrete WC particlesmay individually exhibit a desired shape, such as one or more of aspherical shape, a hexahedral shape, an ellipsoidal shape, a cylindricalshape, a conical shape, or an irregular shape.

The discrete WC particles of the WC powder may be monodisperse, whereineach of the discrete WC particles exhibits substantially the same sizeand shape, or may be polydisperse, wherein at least one of the discreteWC particles exhibits one or more of a different particle size and adifferent shape than at least one other of the discrete WC particles. Insome embodiments, the WC powder has a multi-modal (e.g., bi-modal,tri-modal, etc.) particle size distribution. For example, the WC powdermay include a combination of relatively larger, discrete WC particlesand relatively smaller, discrete WC particles. In additionalembodiments, the WC powder has a mono-modal particle size distribution.For example, all of the discrete WC particles of the WC powder mayexhibit substantially the same particle size.

The WC powder, including the discrete WC particles thereof, the may beformed by conventional processes, which are not described herein.

The binding agent may comprise any material permitting the precursorcomposition to retain a desired shape during subsequent processing, andwhich may be removed (e.g., volatilized off) during the subsequentprocessing. By way of non-limiting example, the binding agent maycomprise an organic compound, such as a wax (e.g., a paraffin wax). Insome embodiments, the binding agent of the precursor composition is aparaffin wax.

Amounts of the preliminary powder, the WC powder, and the binding agentemployed to form the precursor composition may be selected at leastpartially based on the configurations (e.g., material compositions,sizes, shapes) of the preliminary powder, and the WC powder facilitatingthe subsequent formation of the supporting substrate 304 including WCparticles and a homogenized binder including desired and predeterminedamounts of at least one first element selected from Sc, Ti, V, Cr, Mn,Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re,Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,Yb, Lu, Ac, Th, Pa, and U; at least second element selected from Al, Ga,Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; C; and W. As anon-limiting example, the precursor composition may comprise from about5 wt % to about 15 wt % of the preliminary powder, from about 85 wt % toabout 95 wt % of the WC powder, and a remainder of the binding agent(e.g., paraffin wax). If the preliminary powder only includes discretealloy particles, the precursor composition may, for example, includefrom about 5 wt % to about 15 wt % of the discrete preliminaryparticles, from about 85 wt % to about 95 wt % discrete of the WCparticles, and a remainder of a binding agent. If the preliminary powderonly includes first discrete elemental particles of the first element,second discrete elemental particles of the second element, and discreteC particles, the precursor composition may, for example, include fromabout 85 wt % to about 95 wt % of the discrete WC particles, from about4 wt % to about 15 wt % of the first discrete elemental particles, fromabout 0.05 wt % to about 3 wt % of the second discrete elementalparticles, and from about 0.013 wt % to about 0.3 wt % of the discrete Cparticles. In some embodiments, the precursor composition comprisesabout 88 wt % discrete WC particles and about 12 wt % alloy particlesindividually comprising the first element, the second element, and athird element selected from C and W. In additional embodiments, theprecursor composition comprises about 88 wt % of discrete WC particles;about 10.3 wt % of first discrete elemental particles individuallycomprising the first element; about 1.6 wt % of second discreteelemental particles individually comprising the second element; andabout 0.1 wt % of discrete C particles. In further embodiments, theprecursor composition comprises about 88 wt % of discrete WC particles;about 10.7 wt % of first discrete elemental particles of the firstelement; about 1.2 wt % of second discrete elemental particles of thesecond element; and about 0.1 wt % of discrete C particles.

The precursor composition may be formed by mixing the preliminarypowder, the WC powder, the binding agent, and at least one fluidmaterial (e.g., acetone, heptane, etc.) formulated to dissolve anddisperse the binding agent using one or more conventional processes(e.g., conventional milling processes, such as ball milling processes,attritor milling processes, cryomilling processes, jet millingprocesses, etc.) to form a mixture thereof. The preliminary powder, theWC powder, the binding agent, and the fluid material may be combined inany order. In some embodiments, the preliminary powder and the WC powderare combined (e.g., using a first milling process), and then the bindingagent and fluid material are combined with the resulting mixture (e.g.,using a second milling process). During the mixing process, collisionsbetween different particles (e.g., the discrete particles of thepreliminary powder, the discrete WC particles of the WC powder, theadditive particles (if any), etc.) may cause at least some of thedifferent particles to fracture and/or become welded or smearedtogether. For example, during the mixing process at least some materials(e.g., elements, alloys) of the discrete particles of the preliminarypowder may be transferred to surfaces of the WC particles of the WCpowder to form composite particles comprising WC coated with an alloycomprising at least one first element selected from Sc, Ti, V, Cr, Mn,Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re,Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,Yb, Lu, Ac, Th, Pa, and U; at least one second element selected from Al,Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, and B; and at least one thirdelement selected from C and W. Thereafter, the fluid material may beremoved (e.g., evaporated), leaving the binding agent on and around anyremaining discrete particles of the preliminary powder, any remainingdiscrete WC particles of the WC powder, any composite particles (e.g.,particles comprising WC coated with an alloy comprising the firstelement, the second element, and the third element), and any otherparticles comprising constituents of the discrete particles of thepreliminary powder, and the discrete WC particles of the WC powder.

Following the formation of the precursor composition, the precursorcomposition is subjected to a consolidation process to form aconsolidated structure (e.g., the supporting substrate 304) including WCparticles dispersed within a homogenized binder. The homogenized bindermay, for example, comprise a substantially homogeneous alloy (e.g., asubstantially homogeneous peritectic alloy) of at least one firstelement selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb,Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr,Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; atleast one second element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se,As, Ge, Si, and B; C; and W. Amounts of the first element, the secondelement, C, and W in the homogenized binder may at least partiallydepend on the amounts of the first element, the second element, and thethird element included in the precursor composition. For example, thehomogenized binder and the precursor composition may includesubstantially the same amounts of the first element and the secondelement; and homogenized binder may include different amounts of thethird element than the precursor composition resulting from dissolutionof W from the WC particles during the consolidation process and themigration from and/or maintenance of C of different components (e.g.,precursor alloy particles, WC particles, etc.) during the consolidationprocess.

The consolidated structure (e.g., the supporting substrate 304) may beformed to exhibit any desired dimensions and any desired shape. Thedimensions and shape of the consolidated structure may at leastpartially depend upon desired dimensions and desired shapes of a compactstructure (e.g., a cutting table, such as a PDC table) to subsequentlybe formed on and/or attached to the consolidated structure, as describedin further detail below. In some embodiments, the consolidated structureis formed to exhibit a cylindrical column shape. In additionalembodiments, the consolidated structure is formed to exhibit a differentshape, such as a dome shape, a conical shape, a frusto-conical shape, arectangular column shape, a pyramidal shape, a frusto-pyramidal shape, afin shape, a pillar shape, a stud shape, or an irregular shape.Accordingly, the consolidated structure may be formed to exhibit anydesired lateral cross-sectional shape including, but not limited to, acircular shape, a semicircular shape, an ovular shape, a tetragonalshape (e.g., square, rectangular, trapezium, trapezoidal, parallelogram,etc.), a triangular shape, an elliptical shape, or an irregular shape.

The consolidation process may include forming the precursor compositioninto a green structure having a shape generally corresponding to theshape of the consolidated structure, subjecting the green structure toat least one densification process (e.g., a sintering process, a hotisostatic pressing (HIP) process, a sintered-HIP process, a hot pressingprocess, etc.) to form a consolidated structure including WC particlesdispersed within an at least partially (e.g., substantially) homogenizedbinder, and, optionally, subjecting the consolidated structure to atleast one supplemental homogenization process to further homogenize theat least partially homogenized binder. As used herein, the term “green”means unsintered. Accordingly, as used herein, a “green structure” meansand includes an unsintered structure comprising a plurality ofparticles, which may be held together by interactions between one ormore materials of the plurality of particles and/or another material(e.g., a binder).

The precursor composition may be formed into the green structure throughconventional processes, which are not described in detail herein. Forexample, the precursor composition may be provided into a cavity of acontainer (e.g., canister, cup, etc.) having a shape complementary to adesired shape (e.g., a cylindrical column shape) of the consolidatedstructure, and then the precursor composition may be subjected to atleast one pressing process (e.g., a cold pressing process, such as aprocess wherein the precursor composition is subjected to compressivepressure without substantially heating the precursor composition) toform the green structure. The pressing process may, for example, subjectthe precursor composition within the cavity of the container to apressure greater than or equal to about 10 tons per square inch(tons/in²), such as within a range of from about 10 tons/in² to about 30tons/in².

Following the formation of the green structure, the binding agent may beremoved from the green structure. For example, the green structure maybe dewaxed by way of vacuum or flowing hydrogen at an elevatedtemperature. The resulting (e.g., dewaxed) structure may then besubjected to a partial sintering (e.g., pre-sintering) process to form abrown structure having sufficient strength for the handling thereof.

Following the formation of the brown structure, the brown structure maybe subjected to a densification process (e.g., a sintering process, ahot isostatic pressing (HIP) process, a sintered-HIP process, a hotpressing process, etc.) that applies sufficient heat and sufficientpressure to the brown structure to form the consolidated structureincluding the WC particles dispersed in the at least partiallyhomogenized binder. By way of non-limiting example, the brown structuremay be wrapped in a sealing material (e.g., graphite foil), and may thenbe placed in a container made of a high temperature, self-sealingmaterial. The container may be filled with a suitable pressuretransmission medium (e.g., glass particles, ceramic particles, graphiteparticles, salt particles, metal particles, etc.), and the wrapped brownstructure may be provided within the pressure transmission medium. Thecontainer, along with the wrapped brown structure and pressuretransmission medium therein, may then be heated to a consolidationtemperature facilitating the formation of the homogenized binder underisostatic (e.g., uniform) pressure applied by a press (e.g., amechanical press, a hydraulic press, etc.) to at least partially (e.g.,substantially) consolidate the brown structure and form the consolidatedstructure. The consolidation temperature may be a temperature greaterthan the solidus temperature of at least the discrete particles (e.g.,discrete alloy particles and/or discrete elemental particles) of thepreliminary powder used to form the brown structure (e.g., a temperaturegreater than or equal to the liquidus temperature of the discreteparticles, a temperature between the solidus temperature and theliquidus temperature of the discrete particles, etc.), and the appliedpressure may be greater than or equal to about 10 megapascals (MPa)(e.g., greater than or equal to about 50 MPa, greater than or equal toabout 100 MPa, greater than or equal to about 250 MPa, greater than orequal to about 500 MPa, greater than or equal to about 750 MPa, greaterthan or equal to about 1.0 gigapascals (GPa), etc.). During thedensification process, one or more elements of the WC particles and/oradditive(s) (if any) present in the brown structure may diffuse into andhomogeneously intermix with a molten alloy of at least one first elementselected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc,Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm,Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; at least oneor second element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge,Si, and B; and at least one third element selected from C and W to formthe at least partially homogenized binder (e.g., the homogenized alloybinder including the first element, the second element, C, and W) of theconsolidated structure.

As previously mentioned, following formation, the consolidated structuremay be subjected to a supplemental homogenization process to furtherhomogenize the at least partially homogenized binder thereof. Ifperformed, the supplemental homogenization process may heat theconsolidated structure to one or more temperatures above the liquidustemperature of the at least partially homogenized binder thereof for asufficient period of time to reduce (e.g., substantially eliminate)macrosegregation within the at least partially homogenized binder andprovide the resulting further homogenized binder with a single (e.g.,only one) melting temperature. In some embodiments, such as inembodiments wherein the preliminary powder is employed to form theconsolidated structure comprises discrete elemental particles, the atleast partially homogenized binder of the consolidated structure mayhave multiple (e.g., at least two) melting temperatures following thedensification process due to one or more regions of at least partiallyhomogenized binder exhibiting different material composition(s) than oneor more other regions of at least partially homogenized binder. Suchdifferent regions may, for example, form as a result of efficacy marginsin source powder mixing and cold consolidation. In such embodiments, thesupplemental homogenization process may substantially melt andhomogenize the at least partially homogenized binder to remove theregions exhibiting different material composition(s) and provide thefurther homogenized binder with only one melting point. Providing thehomogenized binder of the consolidated structure with only one meltingpoint may be advantageous for the subsequent formation of a cuttingtable using the consolidated structure, as described in further detailbelow. In additional embodiments, such as in embodiments wherein the atleast partially homogenized binder of the consolidated structure isalready substantially homogeneous (e.g., does not include regionsexhibiting different material composition(s) than other regions thereof)following the densification process, the supplemental homogenizationprocess may be omitted.

Referring next to FIG. 3B, the diamond-containing material 301 (FIG. 3A)and the supporting substrate 304 may be subjected to HTHP processing toform a cutting table 302. The HTHP processing may include subjecting thediamond-containing material 301 and the supporting substrate 304 toelevated temperatures and elevated pressures in a directly pressurizedand/or indirectly heated cell for a sufficient time to convert thediscrete diamond particles of the diamond-containing material 301 intointer-bonded diamond particles. The temperatures (e.g., sinteringtemperature(s)) employed within the heated, pressurized cell may begreater than the solidus temperature (e.g., greater than the solidustemperature and less than or equal to the liquidus temperature, greaterthan or equal to the liquidus temperature, etc.) of the homogenizedbinder of the supporting substrate 304, and pressures within the heated,pressurized cell may be greater than or equal to about 2.0 GPa (e.g.,greater than or equal to about 3.0 GPa, such as greater than or equal toabout 4.0 GPa, greater than or equal to about 5.0 GPa, greater than orequal to about 6.0 GPa, greater than or equal to about 7.0 GPa, greaterthan or equal to about 8.0 GPa, or greater than or equal to about 9.0GPa). The temperature(s) employed during the HTHP processing to form thecutting table 302 at least partially depend on the pressure(s) employedduring the HTHP processing, and on the material composition of thehomogenized binder of the supporting substrate 304. Employingpressure(s) above atmospheric pressure (1 atm) during the HTHPprocessing may affect (e.g., shift) metastability lines (e.g., phaseboundaries) of the liquid (L)+diamond (D)+metal carbide (MC) phasefield, which may influence (e.g., compel the increase of) thetemperature(s) employed to form the cutting table 302. In addition, thematerial composition of the homogenized binder of the supportingsubstrate 304 may affect (e.g., increase, decrease) the meltingtemperature(s) of the homogenized binder, and may also affect (e.g.,shift) the metastability lines of the L+D+MC+κ-carbide phase field,which may also impact (e.g., compel the increase of) the temperature(s)employed to form the cutting table 302. The diamond-containing material301 and the supporting substrate 304 may be held at selectedtemperatures and pressures within the heated, pressurized cell for asufficient amount of time to facilitate the inter-bonding of thediscrete diamond particles of the diamond-containing material 301, suchas a period of time between about 30 seconds and about 20 minutes.

During the HTHP processing, the homogenized binder of the supportingsubstrate 304 melts and a portion thereof is swept (e.g., masstransported, diffused) into the diamond-containing material 301 (FIG.3A). The homogenized binder received by the diamond-containing material301 catalyzes the formation of inter-granular bonds between the discretediamond particles of the diamond-containing material 301 to forminter-bonded diamond particles, and also facilitates the formation of athermally stable material (e.g., the thermally stable material 118previously described with reference to FIG. 2) within interstitialspaces between the inter-bonded diamond particles of the cutting table302. When the homogenized binder is in a liquid phase, the secondelement (e.g., one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge,Si, and B) of the homogenized binder may reduce the reactivity of thefirst element (e.g., Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb,Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr,Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U) ofthe homogenized binder with C, permitting the first element to catalyzethe formation of inter-granular bonds between the discrete diamondparticles of the diamond-containing material 301 (FIG. 3A) and alsopromoting the formation of non-binary carbide precipitates (e.g.,ternary κ-carbide precipitates, ternary non-κ-carbide precipitates,quaternary κ-carbide precipitates, quaternary non-κ-carbideprecipitates) within the interstitial spaces between the inter-bondeddiamond particles of the cutting table 302. The thermally stablematerial of the cutting table 302 may render the cutting table 302thermally stable without needing to leach the cutting table 302. Forexample, the thermally stable material may not significantly promotecarbon transformations (e.g., graphite-to-diamond or vice versa) ascompared to conventional cutting tables including inter-bonded diamondparticles substantially exposed to conventional catalyst materials(e.g., catalytic Co, catalytic Fe, catalytic Ni) within interstitialspaces between the inter-bonded diamond particles. Accordingly, thethermally stable material may render the cutting table 302 morethermally stable than conventional cutting tables.

Since the diamond-containing material 301 (FIG. 3A) is provided directlyon the supporting substrate 304, the types, amounts, and distributionsof individual elements swept into the diamond-containing material 301during the HTHP processing is substantially the same as the types,amounts, and distributions of individual elements of the homogenizedbinder of the supporting substrate 304. Put another way, the materialcomposition (including the types, amounts, and distributions of theindividual elements thereof) of the homogenized binder diffused into thediamond-containing material 301 during the HTHP processing to form thecutting table 302 is substantially the same as the material compositionof homogenized binder within the supporting substrate 304 prior to theHTHP processing. For example, if the homogenized binder of thesupporting substrate 304 comprises a ratio of at least one first elementselected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc,Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm,Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U to at leastone second element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge,Si, and B of about 9:1, a ratio of the first element to the secondelement swept into to the diamond-containing material 301 during theHTHP processing will also be about 9:1. Accordingly, providing thediamond-containing material 301 directly on the supporting substrate 304may ensure that desired and predetermined sweep chemistries are providedinto the diamond-containing material 301 during the HTHP processing.

In addition, providing the diamond-containing material 301 (FIG. 3A)directly on the supporting substrate 304 may reduce melting-point-basedcomplexities associated with providing desired sweep chemistries intothe diamond-containing material 301 during the HTHP processing ascompared to configurations wherein a structure having a differentmaterial composition than the homogenized binder of the supportingsubstrate 304 is provided between the diamond-containing material 301and the supporting substrate 304. For example, providing thediamond-containing material 301 directly on the supporting substrate 304may permit a desired material composition (e.g., the materialcomposition of the homogenized binder of the supporting substrate 304)to be swept into the diamond-containing material 301 using a singletemperature (e.g., the melting temperature of the homogenized binder)and/or a relatively narrower temperature range, whereas providing astructure between the diamond-containing material 301 and the supportingsubstrate 304 may require exposing the diamond-containing material 301,the structure, and the supporting substrate 304 to multiple temperatures(e.g., the melting temperature of the structure, and the meltingtemperature of the homogenized binder of the supporting substrate 304)and/or a relatively wider temperature range to permit a desired materialcomposition (e.g., a combination of the material compositions of thestructure and the homogenized binder of the supporting substrate 304) tobe swept into the diamond-containing material 301 during the HTHPprocessing.

Optionally, following formation, the cutting table 302 may be subjectedto at least one solution treatment process to modify the materialcomposition of the thermally stable material thereof. The solutiontreatment process may, for example, decompose carbide precipitates(e.g., κ-carbide precipitates, non-κ-carbide precipitates) of thethermally stable material into to one or more other precipitates. By wayof non-limiting example, if at least the homogenized binder of thesupporting substrate 304 effectuates the formation of a thermally stablematerial including κ-carbide precipitates in the cutting table 302, thecutting table 302 may optionally be subjected to a solution treatmentprocess that heats the thermally stable material at least to adecomposition temperature of the κ-carbide precipitates (e.g., atemperature greater than or equal to about 1000° C., such as from about1000° C. to about 1500° C., or from about 1300° C. to about 1500° C.) ata pressure above the Berman-Simon line to decompose the κ-carbideprecipitates and form FCC L1₂ phase precipitates. If employed, thecutting table 302 may be subjected to a single (e.g., only one) solutiontreatment process employing a single temperature under pressure abovethe Berman-Simon line, or may be subjected to multiple (e.g., more thanone) solution treatment processes employing different temperatures underpressure above the Berman-Simon line. Multiple solution treatmentprocesses at different temperatures may, for example, facilitate theformation of precipitates (e.g., FCC L1₂ phase precipitates) havingdifferent particle sizes than one another. Relatively larger precipitatesizes may enhance high-temperature properties (e.g., creep ruptureproperties) of the thermally stable material, and relatively smallerprecipitate sizes may enhance room-temperature properties of thethermally stable material.

In additional embodiments, the cutting element 100 previously describedwith reference to FIG. 1 may be formed through methods other than thatdescribed with reference to FIGS. 3A and 3B. For example, an embodimentof another method of forming the cutting element 100 (FIG. 1) will nowbe described with reference to FIGS. 4A and 4B, which illustratesimplified cross-sectional views of a container 400 in another processof forming the cutting element 100 shown in FIG. 1. With the descriptionprovided below, it will be readily apparent to one of ordinary skill inthe art that the methods described herein may be used in variousdevices. In other words, the methods of the disclosure may be usedwhenever it is desired to form a thermally stable structure, such as athermally stable cutting table (e.g., a thermally stable diamond table,such as a thermally stable PDC), for an earth-boring tool.

Referring to FIG. 4A, a diamond-containing material 401 may be providedwithin the container 400, and a supporting substrate 404 may be providedon or over the diamond-containing material 401. The container 400 maysubstantially surround and hold the diamond-containing material 401 andthe supporting substrate 404. As shown in FIG. 4A, the container 400 mayinclude an inner cup 408 in which the diamond-containing material 401and a portion of the supporting substrate 404 may be disposed, a bottomend piece 406 in which the inner cup 408 may be at least partiallydisposed, and a top end piece 410 surrounding the supporting substrate404 and coupled (e.g., swage bonded) to one or more of the inner cup 408and the bottom end piece 406. In additional embodiments, the bottom endpiece 406 may be omitted (e.g., absent).

The diamond-containing material 401 (e.g., diamond powder) may be formedof and include discrete diamond particles, and discrete alloy particlesformulated to facilitate the formation of a compact structure (e.g., acutting table, such as a PDC table) including inter-bonded diamondparticles and a thermally stable material (e.g., the thermally stablematerial 118 previously described with reference to FIG. 2) withininterstitial spaces between the inter-bonded diamond particles (e.g.,the inter-bonded diamond particles 114 of the cutting table 102previously described with reference to FIG. 2) following subsequent HTHPprocessing.

The discrete diamond particles of the diamond-containing material 401may comprise one or more of discrete natural diamond particles, anddiscrete synthetic diamond particles. The discrete diamond particles mayindividually exhibit a desired particle size. The discrete diamondparticles may comprise, for example, one or more of micro-sized diamondparticles and nano-sized diamond particles. In addition, each of thediscrete diamond particles may individually exhibit a desired shape,such as at least one of a spherical shape, a hexahedral shape, anellipsoidal shape, a cylindrical shape, a conical shape, or an irregularshape. In some embodiments, each of the discrete diamond particles ofthe diamond-containing material 401 exhibits a substantially sphericalshape. The discrete diamond particles may be monodisperse, wherein eachof the discrete diamond particles exhibits substantially the samematerial composition, size, and shape, or may be polydisperse, whereinat least one of the discrete diamond particles exhibits one or more of adifferent material composition, a different particle size, and adifferent shape than at least one other of the discrete diamondparticles. The discrete diamond particles may be formed by conventionalprocesses, which are not described herein.

The discrete alloy particles of the diamond-containing material 401 mayindividually be formed of and include a homogenized alloy (e.g., ahomogenized peritectic alloy) of at least one first element selectedfrom Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh,Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm,Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and at least onesecond element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si,B, and P. The discrete alloy particles may each individually include anyamounts of the first element and the second element able to facilitate(e.g., catalyze) the inter-bonding of the discrete diamond particlesduring subsequent HTHP processing, and able to facilitate the formationof a thermally stable material (e.g., the thermally stable material 118previously described with reference to FIG. 2) within interstitialspaces between the inter-bonded diamond particles (e.g., theinter-bonded diamond particles 114 previously described with referenceto FIG. 2). The discrete alloy particles of the diamond-containingmaterial 401 may each individually have a liquidus temperature greaterthan or equal to about 525° C., such as within a range of from about525° C. to about 1500° C. By way of non-limiting example, each of thediscrete alloy particles may individually comprise a homogenized alloyselected from Sm₃Sn, Sm₃Bi, Sm₃Te, Sm₃P, Sm₃Si, Sm₃Ga, Sc₃Sn, Sc₃Ge,Sc₃Sb, Sc₃As, Sm₃Be, Sc₃P, Sc₃Si, Y₃Sn, Sc₃Bi, Tm₃Sn, Er₃Sn, Sc₃Te,Y₃Sb, Sc₃Se, Ho₃Sn, Sc₃Ga, Dy₃Sn, Y₃Bi, Tb₃Sn, Tm₃Sb, Er₃Sb, Lu₃Sb,Lu₃Ge, Ti₃Ga, Ti₃Ge, Gd₃Sn, Tb₃Sb, Y₃Ge, Er₃Bi, Ho₃Bi, Tm₃Bi, Lu₃As,Tm₃Ge, Dy₃Bi, Lu₃Bi, Tm₃As, Tb₃Bi, Ti₃Sn, Er₃As, Ti₃Si, Y₃Te, Gd₃Bi,Ce₃Te, Ti₃Al, Zr₃Sn, Dy₃As, La₃Bi, Sc₃Al, Yb₃Se, Tb₃As, Lu₃P, Yb₃Te,Lu₃Sn, Eu₃Se, Er₃Te, Ti₃Sb, Lu₃Si, Tm₃Te, Tm₃P, Gd₃Te, Gd₃As, Zr₃Sb,Lu₃Ga, Er₃P, Sm₃B, Lu₃Te, Ho₃P, Tm₃Si, Er₃Si, Dy₃P, Tm₃Ga, Ce₃As, Y₃Ga,Ho₃Si, Tb₃P, Er₃Ga, Dy₃Si, Eu₃Bi, Hf₃Ga, Ho₃Ga, Gd₃P, Gd₃Se, Lu₃Al,Ce₃Sn, Tb₃Si, Hf₃Sn, Dy₃Ga, Tm₃Al, Gd₃Si, Ti₃Bi, Tb₃Ga, Er₃Al, Yb₃Bi,Yb₃Sb, La₃P, Eu₃As, Fe₃Al, Ho₃Al, Gd₃Ga, Yb₃As, Th₃Bi, Ac₃Sb, Th₃Sn,Tb₃Al, Eu₃P, Fe₃Si, Ti₃Be, Yb₃P, Gd₃Al, Hf₃P, V₃Si, Ce₃Si, V₃Ge, Fe₃Ga,Rh₃Al, Th₃Ge, V₃Al, Fe₃Ge, V₃Ga, Th₃P, V₃P, V₃Sn, Fe₃Sn, Zr₃Be, Hf₃Be,Nb₃Ga, Sc₃Be, Th₃Al, V₃Sb, Ce₃Al, Co₃Al, V₃As, Ni₃Al, Co₃Ga, Ti₃B,Rh₃Ga, Fe₃Be, Fe₃Sb, Sc₃B, U₃P, Fe₃P, Co₃Si, Hf₃Bi, V₃Be, V₃Te, Ni₃Ga,Lu₃Be, Mn₃Al, Ru₃Al, Fe₃As, Ta₃Sn, Mn₃Si, V₃Se, U₃Se, Co₃Sn, Co₃Be,Co₃Ge, U₃Si, Cr₃Si, V₃Bi, Tc₃Al, La₃Si, Rh₃Sn, Cr₃Al, U₃As, Mn₃Ga,Th₃Si, Rh₃Be, Ni₃Be, Mn₃Ge, Cr₃Ge, Pd₃Al, and Cr₃Ga. In someembodiments, the discrete alloy particles are substantially free of Co.In additional embodiments, the discrete alloy particles aresubstantially free of Ni. In further embodiments, the discrete alloyparticles are substantially free of Fe. In still further embodiments,the discrete alloy particles are substantially free of each of Co, Ni,and Fe. Each of the discrete alloy particles may include substantiallythe same elements and element ratios of as each other of the discretealloy particles, or one or more of the discrete alloy particles mayinclude different elements and/or different element ratios than one ormore other of the discrete alloy particles. In some embodiments, each ofthe discrete alloy particles has substantially the same elements andelement ratios as each other of the discrete alloy particles.

Each of the discrete alloy particles of the diamond-containing material401 may individually exhibit a desired particle size, such as a particlesize less than or equal to about 1000 μm. The discrete alloy particlesmay comprise, for example, one or more of discrete micro-sized particlesand discrete nano-sized particles. In addition, each of the discretealloy particles of the diamond-containing material 401 may individuallyexhibit a desired shape, such as one or more of a spherical shape, ahexahedral shape, an ellipsoidal shape, a cylindrical shape, a conicalshape, or an irregular shape. The discrete particles of thediamond-containing material 401 may be monodisperse, wherein each of thediscrete alloy particles exhibits substantially the same size andsubstantially the same shape, or may be polydisperse, wherein at leastone of the discrete alloy particles exhibits one or more of a differentparticle size and a different shape than at least one other of thediscrete alloy particles. In some embodiments, the discrete alloyparticles of the diamond-containing material 401 have a multi-modal(e.g., bi-modal, tri-modal, etc.) particle size distribution. Forexample, the diamond-containing material 401 may include a combinationof relatively larger, discrete alloy particles and relatively smaller,discrete alloy particles. In additional embodiments, the discrete alloyparticles of the diamond-containing material 401 have a mono-modalparticle size distribution.

The discrete alloy particles of the diamond-containing material 401 maybe formed by conventional processes (e.g., ball milling processes,attritor milling processes, cryomilling processes, jet millingprocesses, powder atomization processes, etc.), which are not describedherein. As a non-limiting example, an initial powder formed of andincluding particles of at least one first element selected from Sc, Ti,V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd,Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb,Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and at least one secondelement selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, andP, alloys thereof, and/or combinations thereof may be provided into anattritor mill containing mixing structures (e.g., mixing spheres, mixingbars, etc.), and may then be subjected to a mechanical alloying processuntil the discrete alloy particles are formed. During the mechanicalalloying process collisions between the mixing structures and theinitial powder may cause particles of different materials to fractureand/or be welded or smeared together. Relatively larger particles mayfracture during the mechanical welding process and relatively smallerparticles may weld together, eventually forming discrete alloy particleseach individually comprising a substantially homogeneous mixture of theconstituents of the initial powder in substantially the same proportionsof the initial powder. As another non-limiting example, an alloymaterial may be formed by conventional melting and mixing processes, andthen the alloy material may be formed into the discrete alloy particlesby one or more conventional atomization processes.

The diamond-containing material 401 may exhibit a substantiallyhomogeneous distribution of the discrete diamond particles and thediscrete alloy particles. The discrete diamond particles and thediscrete alloy particles may be combined (e.g., mixed) with one anotherto form the diamond-containing material 401 exhibiting the substantiallyhomogeneous distribution of the discrete diamond particles and thediscrete alloy particles using conventional processes (e.g.,conventional milling processes, such as conventional ball millingprocesses, conventional attritor milling processes, conventionalcryomilling processes, conventional jet milling processes, etc.), whichare not described in detail herein.

The supporting substrate 404 may be formed of and include a materialthat is relatively hard and resistant to wear. By way of non-limitingexample, the supporting substrate 404 may be formed from and include aceramic-metal composite material (also referred to as a “cermet”material). In some embodiments, the supporting substrate 404 is formedof and includes a cemented carbide material including carbide particlescemented together in a binder material. The carbide particles of thesupporting substrate 404 may, for example, individually include one ormore chemical compounds of W and C, such as WC, W₂C, or combinations ofWC and W₂C. In some embodiments, the carbide particles comprise WCparticles each including stoichiometric quantities or nearstoichiometric quantities of W and C. In additional embodiments, one ormore of the carbide particles includes an excess amount of C than thatstoiciometrically required to form WC. In further embodiments, one ormore of the carbide particles includes an excess amount of W than thatstoiciometrically required to form WC. The binder material of thesupporting substrate 404 may comprise a catalytic binder materialformulated to promote the formation of the inter-bonded diamondparticles from discrete diamond particles during HTHP processing, or maycomprise a non-catalytic binder material that does not promote theformation of the inter-bonded diamond particles from discrete diamondparticles during HTHP processing. The supporting substrate 404 may havea material composition substantially the same as that of the supportingsubstrate 304 previously described with reference to FIGS. 3A and 3B, ormay have a different material composition than that of the supportingsubstrate 304 previously described with reference to FIGS. 3A and 3B.

Referring next to FIG. 4B, the diamond-containing material 401 (FIG. 4A)and the supporting substrate 404 may be subjected to HTHP processing toform a cutting table 402. The HTHP processing may include subjecting thediamond-containing material 401 and the supporting substrate 404 toelevated temperatures and elevated pressures in a directly pressurizedand/or indirectly heated cell for a sufficient time to convert thediscrete diamond particles of the diamond-containing material 401 intointer-bonded diamond particles. The temperatures (e.g., sinteringtemperature(s)) employed within the heated, pressurized cell may begreater than the solidus temperature (e.g., greater than the solidustemperature and less than or equal to the liquidus temperature, greaterthan or equal to the liquidus temperature, etc.) of the discrete alloyparticles of the diamond-containing material 401, and pressures withinthe heated, pressurized cell may be greater than or equal to about 2.0GPa (e.g., greater than or equal to about 3.0 GPa, such as greater thanor equal to about 4.0 GPa, greater than or equal to about 5.0 GPa,greater than or equal to about 6.0 GPa, greater than or equal to about7.0 GPa, greater than or equal to about 8.0 GPa, or greater than orequal to about 9.0 GPa). The temperature(s) employed during the HTHPprocessing to form the cutting table 402 at least partially depend onthe pressure(s) employed during the HTHP processing, and on the materialcomposition of the discrete alloy particles of the diamond-containingmaterial 401. Employing pressure(s) above atmospheric pressure (1 atm)during the HTHP processing may affect (e.g., shift) metastability lines(e.g., phase boundaries) of the liquid (L)+diamond (D)+metal carbide(MC) phase field, which may influence (e.g., compel the increase of) thetemperature(s) employed to form the cutting table 402. In addition, thematerial composition of the discrete alloy particles of thediamond-containing material 401 may affect (e.g., increase, decrease)the melting temperature(s) of the discrete alloy particles, and may alsoaffect (e.g., shift) the metastability lines of the L+D+MC+κ-carbidephase field, which may also impact (e.g., compel the increase of) thetemperature(s) employed to form the cutting table 402. Thediamond-containing material 401 and the supporting substrate 404 may beheld at selected temperatures and pressures within the heated,pressurized cell for a sufficient amount of time to facilitate theinter-bonding of the discrete diamond particles of thediamond-containing material 401, such as a period of time between about30 seconds and about 20 minutes.

During the HTHP processing, the discrete alloy particles of thediamond-containing material 401 (FIG. 4A) melt and catalyze theformation of inter-granular bonds between the discrete diamond particlesof the diamond-containing material 401 to form the inter-bonded diamondparticles of the cutting table 402, and also facilitate the formation ofa thermally stable material (e.g., the thermally stable material 118previously described with reference to FIG. 2) within interstitialspaces between the inter-bonded diamond particles of the cutting table402. When the homogenized alloy of the discrete alloy particles is in aliquid phase, the second element (e.g., one or more of Al, Ga, Sn, Be,Bi, Te, Sb, Se, As, Ge, Si, and B) of the homogenized alloy may reducethe reactivity of the first element (e.g., Sc, Ti, V, Cr, Mn, Fe, Co,Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir,Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu,Ac, Th, Pa, and U) of the homogenized alloy with C, permitting the firstelement to catalyze the formation of inter-granular bonds between thediscrete diamond particles of the diamond-containing material 401 andalso promoting the formation of non-binary carbide precipitates (e.g.,ternary κ-carbide precipitates, ternary non-κ-carbide precipitates,quaternary κ-carbide precipitates, quaternary non-κ-carbideprecipitates) within the interstitial spaces between the inter-bondeddiamond particles of the cutting table 402. Even if the first elementcomprises an element (e.g., Co, No, Ag, Cu, Au, Pt, Tc) that is nothighly reactive with C to form a binary carbide, the second element mayenhance the stability properties (e.g., thermal stability properties,mechanical stability properties) of the cutting table 402 byfacilitating the formation of carbide precipitates (e.g., κ-carbideprecipitates, non-κ-carbide precipitates) having formula (1) above. Thethermally stable material of the cutting table 402 may render thecutting table 402 thermally stable without needing to leach the cuttingtable 402. For example, the thermally stable material may notsignificantly promote carbon transformations (e.g., graphite-to-diamondor vice versa) as compared to conventional cutting tables includinginter-bonded diamond particles substantially exposed to conventionalcatalyst materials (e.g., catalytic Co, catalytic Fe, catalytic Ni)within interstitial spaces between the inter-bonded diamond particles.Accordingly, the thermally stable material may render the cutting table402 more thermally stable than conventional cutting tables.

Optionally, following formation, the cutting table 402 may be subjectedto at least one solution treatment process to modify the materialcomposition of the thermally stable material thereof. The solutiontreatment process may, for example, decompose carbide precipitates(e.g., κ-carbide precipitates, non-κ-carbide precipitates) of thethermally stable material into to one or more other precipitates. By wayof non-limiting example, if at least the discrete alloy particles of thediamond-containing material 401 (FIG. 4A) effectuate the formation of athermally stable material including κ-carbide precipitates in thecutting table 402, the cutting table 402 may optionally be subjected toa solution treatment process that heats the thermally stable material atleast to a decomposition temperature of the κ-carbide precipitates(e.g., a temperature greater than or equal to about 1000° C., such asfrom about 1000° C. to about 1500° C., or from about 1300° C. to about1500° C.) at a pressure above the Berman-Simon line to decompose theκ-carbide precipitates and form FCC L1₂ phase precipitates. If employed,the cutting table 402 may be subjected to a single (e.g., only one)solution treatment process employing a single temperature under pressureabove the Berman-Simon line, or may be subjected to multiple (e.g., morethan one) solution treatment processes employing different temperaturesunder pressure above the Berman-Simon line. Multiple solution treatmentprocesses at different temperatures may, for example, facilitate theformation of precipitates (e.g., FCC L1₂ phase precipitates) havingdifferent particle sizes than one another. Relatively larger precipitatesizes may enhance high-temperature properties (e.g., creep ruptureproperties) of the thermally stable material, and relatively smallerprecipitate sizes may enhance room-temperature properties of thethermally stable material.

In further embodiments, the cutting element 100 previously describedwith reference to FIG. 1 may be formed through methods other than thosepreviously described with reference to FIGS. 3A and 3B and withreference to FIGS. 4A and 4B. For example, an embodiment of anothermethod of forming the cutting element 100 (FIG. 1) will now be describedwith reference to FIGS. 5A and 5B, which illustrate simplifiedcross-sectional views of a container 500 in another process of formingthe cutting element 100 shown in FIG. 1. With the description providedbelow, it will be readily apparent to one of ordinary skill in the artthat the methods described herein may be used in various devices. Inother words, the methods of the disclosure may be used whenever it isdesired to form a thermally stable structure, such as a thermally stablecutting table (e.g., a thermally stable diamond table, such as athermally stable PDC), for an earth-boring tool.

Referring to FIG. 5A, a diamond-containing material 501 may be providedwithin the container 500, a supporting substrate 504 may be provided onor over the diamond-containing material 501, and an alloy material 513on at least the diamond-containing material 501. The container 500 maysubstantially surround and hold the diamond-containing material 501, thesupporting substrate 504, and the alloy material 513. As shown in FIG.5A, the container 500 may include an inner cup 508 in which thediamond-containing material 501, the alloy material 513, and a portionof the supporting substrate 504 may be disposed; a bottom end piece 506in which the inner cup 508 may be at least partially disposed; and a topend piece 510 surrounding the supporting substrate 504 and coupled(e.g., swage bonded) to one or more of the inner cup 508 and the bottomend piece 506. In additional embodiments, the bottom end piece 506 maybe omitted (e.g., absent).

The diamond-containing material 501 (e.g., diamond powder) may be formedof and include discrete diamond particles (e.g., discrete naturaldiamond particles, discrete synthetic diamond particles, combinationsthereof, etc.). The discrete diamond particles may individually exhibita desired particle size. The discrete diamond particles may comprise,for example, one or more of micro-sized diamond particles and nano-sizeddiamond particles. In addition, each of the discrete diamond particlesmay individually exhibit a desired shape, such as at least one of aspherical shape, a hexahedral shape, an ellipsoidal shape, a cylindricalshape, a conical shape, or an irregular shape. In some embodiments, eachof the discrete diamond particles of the diamond-containing material 501exhibits a substantially spherical shape. The discrete diamond particlesmay be monodisperse, wherein each of the discrete diamond particlesexhibits substantially the same material composition, size, and shape,or may be polydisperse, wherein at least one of the discrete diamondparticles exhibits one or more of a different material composition, adifferent particle size, and a different shape than at least one otherof the discrete diamond particles. The diamond-containing material 501may have a material composition substantially the same as that of thediamond-containing material 301 previously described with reference toFIGS. 3A and 3B, may have a material composition substantially the sameas that of the diamond-containing material 401 previously described withreference to FIGS. 4A and 4B, or may have a material compositiondifferent than that of each of the diamond-containing material 301previously described with reference to FIGS. 3A and 3B and thediamond-containing material 401 previously described with reference toFIGS. 4A and 4B. In some embodiments, the diamond-containing material501 is substantially free of discrete alloy particles dispersed amongstthe discrete diamond particles thereof. The diamond-containing material501 may be formed by conventional processes, which are not describedherein.

The supporting substrate 504 may be formed of and include a materialthat is relatively hard and resistant to wear. By way of non-limitingexample, the supporting substrate 504 may be formed from and include aceramic-metal composite material. In some embodiments, the supportingsubstrate 504 is formed of and includes a cemented carbide materialincluding carbide particles cemented together in a binder material. Thecarbide particles of the supporting substrate 504 may, for example,individually include one or more chemical compounds of W and C, such asWC, W₂C, or combinations of WC and W₂C. In some embodiments, the carbideparticles comprise WC particles each including stoichiometric quantitiesor near stoichiometric quantities of W and C. In additional embodiments,one or more of the carbide particles include an excess amount of C thanthat stoiciometrically required to form WC. In further embodiments, oneor more of the carbide particles includes an excess amount of W thanthat stoiciometrically required to form WC. The binder material of thesupporting substrate 404 may comprise a catalytic binder materialformulated to promote the formation of the inter-bonded diamondparticles from discrete diamond particles during HTHP processing, or maycomprise a non-catalytic binder material that does not promote theformation of the inter-bonded diamond particles from discrete diamondparticles during HTHP processing. The supporting substrate 504 may havea material composition substantially the same as that of the supportingsubstrate 304 previously described with reference to FIGS. 3A and 3B,may have a material composition substantially the same as that of thesupporting substrate 404 previously described with reference to FIGS. 4Aand 4B, or may have a material composition different than that of eachof the supporting substrate 304 previously described with reference toFIGS. 3A and 3B and the supporting substrate 404 previously describedwith reference to FIGS. 4A and 4B.

The alloy material 513 may be provided directly adjacent one or moreoutermost (e.g., peripheral) boundaries of the diamond-containingmaterial 501. The alloy material 513 may be provided directly adjacentopposing outermost boundaries of the diamond-containing material 501 andthe supporting substrate 504, such that at least a portion of the alloymaterial 513 intervenes between the diamond-containing material 501 andthe supporting substrate 504; and/or may be provided directly adjacentoutermost boundaries of the diamond-containing material 501 not opposingan outermost boundary of the supporting substrate 504, such that atleast a portion of the alloy material 513 does not intervene between thediamond-containing material 501 and the supporting substrate 504. Forexample, as shown in FIG. 5A, a first volume 513A of the alloy material513 may be located directly adjacent opposing outermost boundaries ofthe diamond-containing material 501 and the supporting substrate 504,and a second volume 513B of the alloy material 513 may be locateddirectly adjacent one or more other outermost boundaries of thediamond-containing material 501. In some embodiments, the alloy material513 only includes the first volume 513A, such that the alloy material513 is located directly adjacent opposing outermost boundaries of thediamond-containing material 501 and the supporting substrate 504, butdoes not substantially cover any other outermost boundaries of thediamond-containing material 501. In additional embodiments, the alloymaterial 513 only includes the second volume 513B, such that the alloymaterial 513 does not substantially intervene between diamond-containingmaterial 501 and the supporting substrate 504, but does cover at leastsome other outermost boundaries (e.g., another outermost verticalboundary, outermost lateral boundaries) of the diamond-containingmaterial 501. In further embodiments, the alloy material 513 includesthe first volume 513A and the second volume 513B.

The alloy material 513 may be formed of and include at least onehomogenized alloy (e.g., a homogenized peritectic alloy) of at least onefirst element selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y,Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg,La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa,and U, and at least one second element selected from Al, Ga, Sn, Be, Bi,Te, Sb, Se, As, Ge, Si, B, and P. The homogenized alloy may include anyamounts of the first element and the second element able to facilitate(e.g., catalyze) the inter-bonding of the discrete diamond particlesduring subsequent HTHP processing, and able to facilitate the formationof a thermally stable material (e.g., the thermally stable material 118previously described with reference to FIG. 2) within interstitialspaces between the inter-bonded diamond particles (e.g., theinter-bonded diamond particles 114 previously described with referenceto FIG. 2). The homogenized alloy of the alloy material 513 may have aliquidus temperature greater than or equal to about 525° C., such aswithin a range of from about 525° C. to about 1500° C. By way ofnon-limiting example, the homogenized alloy may be selected from Sm₃Sn,Sm₃Bi, Sm₃Te, Sm₃P, Sm₃Si, Sm₃Ga, Sc₃Sn, Sc₃Ge, Sc₃Sb, Sc₃As, Sm₃Be,Sc₃P, Sc₃Si, Y₃Sn, Sc₃Bi, Tm₃Sn, Er₃Sn, Sc₃Te, Y₃Sb, Sc₃Se, Ho₃Sn,Sc₃Ga, Dy₃Sn, Y₃Bi, Tb₃Sn, Tm₃Sb, Er₃Sb, Lu₃Sb, Lu₃Ge, Ti₃Ga, Ti₃Ge,Gd₃Sn, Tb₃Sb, Y₃Ge, Er₃Bi, Ho₃Bi, Tm₃Bi, Lu₃As, Tm₃Ge, Dy₃Bi, Lu₃Bi,Tm₃As, Tb₃Bi, Ti₃Sn, Er₃As, Ti₃Si, Y₃Te, Gd₃Bi, Ce₃Te, Ti₃Al, Zr₃Sn,Dy₃As, La₃Bi, Sc₃Al, Yb₃Se, Tb₃As, Lu₃P, Yb₃Te, Lu₃Sn, Eu₃Se, Er₃Te,Ti₃Sb, Lu₃Si, Tm₃Te, Tm₃P, Gd₃Te, Gd₃As, Zr₃Sb, Lu₃Ga, Er₃P, Sm₃B,Lu₃Te, Ho₃P, Tm₃Si, Er₃Si, Dy₃P, Tm₃Ga, Ce₃As, Y₃Ga, Ho₃Si, Tb₃P, Er₃Ga,Dy₃Si, Eu₃Bi, Hf₃Ga, Ho₃Ga, Gd₃P, Gd₃Se, Lu₃Al, Ce₃Sn, Tb₃Si, Hf₃Sn,Dy₃Ga, Tm₃Al, Gd₃Si, Ti₃Bi, Tb₃Ga, Er₃Al, Yb₃Bi, Yb₃Sb, La₃P, Eu₃As,Fe₃Al, Ho₃Al, Gd₃Ga, Yb₃As, Th₃Bi, Ac₃Sb, Th₃Sn, Tb₃Al, Eu₃P, Fe₃Si,Ti₃Be, Yb₃P, Gd₃Al, Hf₃P, V₃Si, Ce₃Si, V₃Ge, Fe₃Ga, Rh₃Al, Th₃Ge, V₃Al,Fe₃Ge, V₃Ga, Th₃P, V₃P, V₃Sn, Fe₃Sn, Zr₃Be, Hf₃Be, Nb₃Ga, Sc₃Be, Th₃Al,V₃Sb, Ce₃Al, Co₃Al, V₃As, Ni₃Al, Co₃Ga, Ti₃B, Rh₃Ga, Fe₃Be, Fe₃Sb, Sc₃B,U₃P, Fe₃P, Co₃Si, Hf₃Bi, V₃Be, V₃Te, Ni₃Ga, Lu₃Be, Mn₃Al, Ru₃Al, Fe₃As,Ta₃Sn, Mn₃Si, V₃Se, U₃Se, Co₃Sn, Co₃Be, Co₃Ge, U₃Si, Cr₃Si, V₃Bi, Tc₃Al,La₃Si, Rh₃Sn, Cr₃Al, U₃As, Mn₃Ga, Th₃Si, Rh₃Be, Ni₃Be, Mn₃Ge, Cr₃Ge,Pd₃Al, and Cr₃Ga. In some embodiments, the homogenized alloy issubstantially free of Co. In additional embodiments, the the homogenizedalloy is substantially free of Ni. In further embodiments, thehomogenized alloy is substantially free of Fe. In still furtherembodiments, the homogenized alloy is substantially free of each of Co,Ni, and Fe.

The alloy material 513 may comprise at least one solid, substantiallycontinuous alloy structure (e.g., an alloy foil, an alloy sheet, analloy film, an alloy mesh) extending across (e.g., substantially across)one or more of the outermost boundaries (e.g., outermost verticalboundaries, outermost lateral boundaries) of at least thediamond-containing material 501; or may comprise a volume (e.g., group,cluster) of relatively smaller, discrete alloy structures (e.g.,discrete alloy particles) positioned relative to one another to form alarger structure exhibiting a desired geometric configuration about theoutermost boundaries of at least the diamond-containing material 501,but substantially free of bonds directly coupling the relativelysmaller, discrete alloy structures to one another. In some embodiments,the alloy material 513 comprises a single (e.g., only one) alloystructure (e.g., an alloy foil, an alloy sheet, an alloy film, an alloyshim, an alloy mesh) laterally extending substantially completely acrossopposing outermost vertical boundaries of the diamond-containingmaterial 501 and the supporting substrate 504. In additionalembodiments, the alloy material 513 comprises a volume of discrete alloyparticles that together laterally extend substantially completely acrossopposing outermost vertical boundaries of the diamond-containingmaterial 501 and the supporting substrate 504. In further embodiments,the alloy material 513 comprises multiple (e.g., more than one) solid,substantially continuous alloy structures (e.g., alloy foils, alloysheets, alloy films, alloy shims, alloy meshes, combinations thereof)that together extend substantially completely across one or more (e.g.,only one, multiple, all) outermost boundaries (e.g., outermost verticalboundaries, outermost lateral boundaries) of the diamond-containingmaterial 501. In yet further embodiments, the alloy material 513comprises at least one volume of discrete alloy particles that togetherextend substantially completely across one or more (e.g., only one,multiple, all) outermost boundaries (e.g., outermost verticalboundaries, outermost lateral boundaries) of the diamond-containingmaterial 501. In yet still further embodiments, the alloy material 513comprises at least one solid, substantially continuous alloy structure(e.g., an alloy foil, an alloy sheet, an alloy film, an alloy shim, analloy mesh) and at least one volume of discrete alloy particles thattogether extend substantially completely across one or more (e.g., onlyone, multiple, all) outermost boundaries (e.g., outermost verticalboundaries, outermost lateral boundaries) of the diamond-containingmaterial 501.

Referring next to FIG. 5B, the diamond-containing material 501 (FIG.5A), the supporting substrate 504, and the alloy material 513 may besubjected to HTHP processing to form a cutting table 502. The HTHPprocessing may include subjecting the diamond-containing material 501,the supporting substrate 504, and the alloy material 513 to elevatedtemperatures and elevated pressures in a directly pressurized and/orindirectly heated cell for a sufficient time to convert the discretediamond particles of the diamond-containing material 501 intointer-bonded diamond particles. The temperatures (e.g., sinteringtemperature(s)) employed within the heated, pressurized cell may begreater than the solidus temperature (e.g., greater than the solidustemperature and less than or equal to the liquidus temperature, greaterthan or equal to the liquidus temperature, etc.) of the homogenizedalloy of the alloy material 513, and pressures within the heated,pressurized cell may be greater than or equal to about 2.0 GPa (e.g.,greater than or equal to about 3.0 GPa, such as greater than or equal toabout 4.0 GPa, greater than or equal to about 5.0 GPa, greater than orequal to about 6.0 GPa, greater than or equal to about 7.0 GPa, greaterthan or equal to about 8.0 GPa, or greater than or equal to about 9.0GPa). The temperature(s) employed during the HTHP processing to form thecutting table 502 at least partially depend on the pressure(s) employedduring the HTHP processing, and on the material composition of thehomogenized alloy of the alloy material 513. Employing pressure(s) aboveatmospheric pressure (1 atm) during the HTHP processing may affect(e.g., shift) metastability lines (e.g., phase boundaries) of the liquid(L)+diamond (D)+metal carbide (MC) phase field, which may influence(e.g., compel the increase of) the temperature(s) employed to form thecutting table 502. In addition, the material composition of thehomogenized alloy of the alloy material 513 may affect (e.g., increase,decrease) the melting temperature(s) of the homogenized alloy, and mayalso affect (e.g., shift) the metastability lines of theL+D+MC+κ-carbide phase field, which may also impact (e.g., compel theincrease of) the temperature(s) employed to form the cutting table 502.The diamond-containing material 501, the supporting substrate 504, andthe alloy material 513 may be held at selected temperatures andpressures within the heated, pressurized cell for a sufficient amount oftime to facilitate the inter-bonding of the discrete diamond particlesof the diamond-containing material 501, such as a period of time betweenabout 30 seconds and about 20 minutes.

During the HTHP processing, the homogenized alloy of the alloy material513 melts and a portion thereof is swept (e.g., mass transported,diffused) into the diamond-containing material 501 (FIG. 5A). Thehomogenized alloy received by the diamond-containing material 501catalyzes the formation of inter-granular bonds between the discretediamond particles of the diamond-containing material 501 to forminter-bonded diamond particles, and also facilitates the formation of athermally stable material (e.g., the thermally stable material 118previously described with reference to FIG. 2) within interstitialspaces between the inter-bonded diamond particles of the cutting table502. When the homogenized alloy is in a liquid phase, the second element(e.g., one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, and B)of the homogenized alloy may reduce the reactivity of the first element(e.g., Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh,Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu,Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U) of the homogenizedalloy with C, permitting the first element to catalyze the formation ofinter-granular bonds between the discrete diamond particles of thediamond-containing material 501 and also promoting the formation ofnon-binary carbide precipitates (e.g., ternary κ-carbide precipitates,ternary non-κ-carbide precipitates,quaternary κ-carbide precipitates,quaternary non-κ-carbide precipitates) within the interstitial spacesbetween the inter-bonded diamond particles of the cutting table. Even ifthe first element comprises an element (e.g., Co, No, Ag, Cu, Au, Pt,Tc) that is not highly reactive with C to form a binary carbide, thesecond element may enhance the stability properties (e.g., thermalstability properties, mechanical stability properties) of the cuttingtable 502 by facilitating the formation of carbide precipitates (e.g.,κ-carbide precipitates, non-κ-carbide precipitates) having formula (1)above. The thermally stable material of the cutting table 502 may renderthe cutting table 502 thermally stable without needing to leach thecutting table 502. For example, the thermally stable material may notsignificantly promote carbon transformations (e.g., graphite-to-diamondor vice versa) as compared to conventional cutting tables includinginter-bonded diamond particles substantially exposed to conventionalcatalyst materials (e.g., catalytic Co, catalytic Fe, catalytic Ni)within interstitial spaces between the inter-bonded diamond particles.Accordingly, the thermally stable material may render the cutting table502 more thermally stable than conventional cutting tables.

Optionally, following formation, the cutting table 502 may be subjectedto at least one solution treatment process to modify the materialcomposition of the thermally stable material thereof. The solutiontreatment process may, for example, decompose carbide precipitates(e.g., κ-carbide precipitates, non-κ-carbide precipitates) of thethermally stable material into to one or more other precipitates, suchas FCC L1₂ phase precipitates. By way of non-limiting example, if atleast the alloy material 513 (FIG. 5A) effectuates the formation of athermally stable material including κ-carbide precipitates in thecutting table 502, the cutting table 502 may optionally be subjected toa solution treatment process that heats the thermally stable material atleast to a decomposition temperature of the κ-carbide precipitates(e.g., a temperature greater than or equal to about 1000° C., such asfrom about 1000° C. to about 1500° C., or from about 1300° C. to about1500° C.) at a pressure above the Berman-Simon line to decompose theκ-carbide precipitates and form FCC L1₂ phase precipitates. If employed,the cutting table 502 may be subjected to a single (e.g., only one)solution treatment process employing a single temperature under pressureabove the Berman-Simon line, or may be subjected to multiple (e.g., morethan one) solution treatment processes employing different temperaturesunder pressure above the Berman-Simon line. Multiple solution treatmentprocesses at different temperatures may, for example, facilitate theformation of precipitates (e.g., FCC L1₂ phase precipitates) havingdifferent particle sizes than one another. Relatively larger precipitatesizes may enhance high-temperature properties (e.g., creep ruptureproperties) of the thermally stable material, and relatively smallerprecipitate sizes may enhance room-temperature properties of thethermally stable material.

With returned reference to FIG. 1, while FIG. 1 depicts a particularconfiguration of the cutting element 100, including particularconfigurations of the cutting table 102 and the supporting substrate 104thereof, different configurations may be employed. One or more of thecutting table 102 and the supporting substrate 104 may, for example,exhibit a different shape (e.g., a dome shape, a conical shape, afrusto-conical shape, a rectangular column shape, a pyramidal shape, afrusto-pyramidal shape, a fin shape, a pillar shape, a stud shape, or anirregular shape) and/or a different size (e.g., a different diameter, adifferent height), and/or the interface 106 between the supportingsubstrate 104 and cutting table 102 may be non-planar (e.g., convex,concave, ridged, sinusoidal, angled, jagged, V-shaped, U-shaped,irregularly shaped, etc.). By way of non-limiting example, in accordancewith additional embodiments of the disclosure, FIGS. 6 through 17 showsimplified side elevation views of cutting elements exhibiting differentconfigurations than that of the cutting element 100 shown in FIG. 1.Throughout FIGS. 6 through 17 and the description associated therewith,functionally similar features are referred to with similar referencenumerals incremented by 100. To avoid repetition, not all features shownin FIGS. 6 through 17 are described in detail herein. Rather, unlessdescribed otherwise below, a feature designated by a reference numeralthat is a 100 increment of the reference numeral of a feature previouslydescribed with respect to one or more of FIGS. 1 and 6 through 17(whether the previously described feature is first described before thepresent paragraph, or is first described after the present paragraph)will be understood to be substantially similar to the previouslydescribed feature.

FIG. 6 illustrates a simplified side elevation view of a cutting element600, in accordance with another embodiment of the disclosure. Thecutting element 600 includes a supporting substrate 604, and a cuttingtable 602 attached to the supporting substrate 604 at an interface 606.The cutting table 602 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the cutting table 102 previously described withreference to FIGS. 1 and 2. In addition, the supporting substrate 604may have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of one or more of the supporting substrates 104, 304, 404,504 previously described with reference to FIGS. 1, 3A, 4A, and 5A. Asshown in FIG. 6, the cutting table 602 exhibits a generally conicalshape, and includes a conical side surface 608 and an apex 601 (e.g.,tip) that at least partially define a cutting face 610 of the cuttingtable 602. The apex 601 comprises an end of the cutting table 602opposing another end of the cutting table 602 secured to the supportingsubstrate 604 at the interface 606. The conical side surface 608 extendsupwardly and inwardly from or proximate the interface 606 toward theapex 601. The apex 601 may be centered about a central longitudinal axisof the cutting element 600, and may be at least partially (e.g.,substantially) radiused (e.g., arcuate). The conical side surface 608may be defined by at least one angle θ between the conical side surface608 and a phantom line 603 (shown in FIG. 6 with dashed lines)longitudinally extending from a lateral side surface of the supportingsubstrate 604. The angle θ may, for example, be within a range of fromabout five degrees (5°) to about eighty-five degrees (85°), such as fromabout fifteen degrees (15°) to about seventy-five degrees (75°), fromabout thirty degrees (30°) to about sixty degrees (60°), or from aboutforty-five degrees (45°) to about sixty degrees (60°). Ratios of aheight of the cutting element 600 to outer diameters of the cuttingelement 600 may be within a range of from about 0.1 to about 48. Thecutting element 600, including the cutting table 602 and the supportingsubstrate 604 thereof, may be formed using one or more processessubstantially similar to those previously described with reference toFIGS. 3A through 5B (e.g., a process substantially similar to thatpreviously described with reference to FIGS. 3A and 3B; a processsubstantially similar to that previously described with reference toFIGS. 4A and 4B; a process substantially similar to that previouslydescribed with reference to FIGS. 5A and 5B).

FIG. 7 illustrates a simplified side elevation view of a cutting element700, in accordance with another embodiment of the disclosure. Thecutting element 700 includes a supporting substrate 704, and a cuttingtable 702 attached to the supporting substrate 704 at an interface 706.The cutting table 702 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the cutting table 102 previously described withreference to FIGS. 1 and 2. In addition, the supporting substrate 704may have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of one or more of the supporting substrates 104, 304, 404,504 previously described with reference to FIGS. 1, 3A, 4A, and 5A. Asshown in FIG. 7, the cutting table 702 exhibits a generallyfrusto-conical shape, and includes a conical side surface 708 and anapex 701 (e.g., tip) that at least partially define a cutting face 710of the cutting table 702. The apex 701 comprises an end of the cuttingtable 702 opposing another end of the cutting table 702 secured to thesupporting substrate 704 at the interface 706. The conical side surface708 extends upwardly and inwardly from or proximate the interface 706toward the apex 701. The apex 701 may be centered about and may extendsymmetrically outward diametrically from and perpendicular to a centrallongitudinal axis of the cutting element 700. The apex 701 may exhibit acircular lateral shape or a non-circular lateral shape (e.g., alaterally elongated shape, such as a rectangular shape, anon-rectangular quadrilateral shape, an elliptical shape, etc.), and maybe substantially flat (e.g., two-dimensional, planar, non-radiused,non-arcuate, non-curved). The conical side surface 708 may be defined byat least one angle θ between the conical side surface 708 and a phantomline 703 (shown in FIG. 7 with dashed lines) longitudinally extendingfrom a lateral side surface of the supporting substrate 704. The angle θmay, for example, be within a range of from about 5° to about 85°, suchas from about 15° to about 75°, from about 30° to about 60°, or fromabout 45° to about 60°. Interfaces (e.g., edges) between the conicalside surface 708 and the apex 701 may be smooth and transitioned (e.g.,chamfered and/or radiused), or may be sharp (e.g., non-chamfered andnon-radiused). A ratio of an outer diameter of the cutting table 702 atthe apex 701 relative to an outer diameter of the cutting table 702 atthe interface 706 may be within a range of from about 0.001 to about 1.The cutting element 700, including the cutting table 702 and thesupporting substrate 704 thereof, may be formed using one or moreprocesses substantially similar to those previously described withreference to FIGS. 3A through 5B (e.g., a process substantially similarto that previously described with reference to FIGS. 3A and 3B; aprocess substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 8 illustrates a simplified side elevation view of a cutting element800, in accordance with another embodiment of the disclosure. Thecutting element 800 includes a supporting substrate 804, and a cuttingtable 802 attached to the supporting substrate 804 at an interface 806.The cutting table 802 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the cutting table 102 previously described withreference to FIGS. 1 and 2. In addition, the supporting substrate 804may have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of one or more of the supporting substrates 104, 304, 404,504 previously described with reference to FIGS. 1, 3A, 4A, and 5A. Asshown in FIG. 8, the cutting table 802 exhibits a generallyfrusto-conical shape, and includes a conical side surface 808 and anapex 801 (e.g., tip) that at least partially define a cutting face 810of the cutting table 802. The apex 801 comprises an end of the cuttingtable 802 opposing another end of the cutting table 802 secured to thesupporting substrate 804 at the interface 806. The conical side surface808 extends upwardly and inwardly from or proximate the interface 806toward the apex 801. A center of the apex 801 may be laterally offsetfrom a central longitudinal axis of the cutting element 800. The apex801 may exhibit a circular lateral shape or a non-circular lateral shape(e.g., a laterally elongated shape, such as a rectangular shape, anon-rectangular quadrilateral shape, an elliptical shape, etc.), and maybe substantially flat (e.g., two-dimensional, planar, non-radiused,non-arcuate, non-curved). At least one region of the conical sidesurface 808 may be defined by at least one angle θ between the conicalside surface 808 and a phantom line 803 (shown in FIG. 8 with dashedlines) longitudinally extending from a lateral side surface of thesupporting substrate 804, and at least one other region of the conicalside surface 808 may be defined by at least one additional angle αbetween the conical side surface 808 and the phantom line 803. The angleθ may be greater than the additional angle α. Each of the angle θ andthe additional angle α may individually be within a range of from about5° to about 85°. Interfaces (e.g., edges) between the conical sidesurface 808 and the apex 801 may be smooth and transitioned (e.g.,chamfered and/or radiused), or may be sharp (e.g., non-chamfered andnon-radiused). A ratio of an outer diameter of the cutting table 802 atthe apex 801 relative to an outer diameter of the cutting table 802 atthe interface 806 may be within a range of from about 0.001 to about 1.The cutting element 800, including the cutting table 802 and thesupporting substrate 804 thereof, may be formed using one or moreprocesses substantially similar to those previously described withreference to FIGS. 3A through 5B (e.g., a process substantially similarto that previously described with reference to FIGS. 3A and 3B; aprocess substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 9 illustrates a simplified side elevation view of a cutting element900, in accordance with another embodiment of the disclosure. Thecutting element 900 includes a supporting substrate 904, and a cuttingtable 902 attached to the supporting substrate 904 at an interface 906.The cutting table 902 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the cutting table 102 previously described withreference to FIGS. 1 and 2. In addition, the supporting substrate 904may have a material composition and a material distributionsubstantially similar to the material composition and the materialdistribution of one or more of the supporting substrates 104, 304, 404,504 previously described with reference to FIGS. 1, 3A, 4A, and 5A. Asshown in FIG. 9, the cutting table 902 exhibits a chisel shape, andincludes opposing conical side surfaces 908, opposing flat side surfaces905, and an apex 901 (e.g., tip) that at least partially define acutting face 910 of the cutting table 902. The apex 901 comprises an endof the cutting table 902 opposing another end of the cutting table 902secured to the supporting substrate 904 at the interface 906. Theopposing conical side surfaces 908 extend upwardly and inwardly from orproximate the interface 906 toward the apex 901. The opposing flat sidesurfaces 905 intervene between the opposing conical side surfaces 908,and also extend upwardly and inwardly from or proximate the interface906 toward the apex 901. The apex 901 may be centered about and mayextend symmetrically outward diametrically from and perpendicular to acentral longitudinal axis of the cutting element 900. The apex 901 mayexhibit a circular lateral shape or a non-circular lateral shape (e.g.,a laterally elongated shape, such as a rectangular shape, anon-rectangular quadrilateral shape, an elliptical shape, etc.), and maybe either arcuate (e.g., non-planar, radiused, curved) or substantiallyflat (e.g., two-dimensional, planar, non-radiused, non-arcuate,non-curved). The opposing conical side surfaces 908 may be defined by atleast one angle θ between each of the opposing conical side surfaces 908and a phantom line 903 (shown in FIG. 9 with dashed lines)longitudinally extending from a lateral side surface of the supportingsubstrate 904. The angle θ may, for example, be within a range of fromabout 5° to about 85°, such as from about 15° to about 75°, from about30° to about 60°, or from about 45° to about 60°. The opposing flat sidesurfaces 905 may individually be defined by at least one other anglebetween the flat surface 905 and the phantom line 903, wherein the atleast one other angle is different than (e.g., less than or greaterthan) the angle θ between each of the opposing conical side surfaces 908and the phantom line 903. Interfaces between the opposing conical sidesurfaces 908, the opposing flat side surfaces 905, and the apex 901 maybe smooth and transitioned (e.g., chamfered and/or radiused), or may besharp (e.g., non-chamfered and non-radiused). In some embodiments, amaximum height of the cutting element 900 is less than or equal to about48 mm. The cutting element 900, including the cutting table 902 and thesupporting substrate 904 thereof, may be formed using one or moreprocesses substantially similar to those previously described withreference to FIGS. 3A through 5B (e.g., a process substantially similarto that previously described with reference to FIGS. 3A and 3B; aprocess substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 10 illustrates a simplified side elevation view of a cuttingelement 1000, in accordance with another embodiment of the disclosure.The cutting element 1000 includes a supporting substrate 1004, and acutting table 1002 attached to the supporting substrate 1004 at aninterface 1006. The cutting table 1002 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1004 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 10, the cutting table 1002 exhibits a chiselshape, and includes opposing conical side surfaces 1008, opposing flatside surfaces 1005, and an apex 1001 (e.g., tip) that at least partiallydefine a cutting face 1010 of the cutting table 1002. The apex 1001comprises an end of the cutting table 1002 opposing another end of thecutting table 1002 secured to the supporting substrate 1004 at theinterface 1006. The opposing conical side surfaces 1008 extend upwardlyand inwardly from or proximate the interface 1006 toward the apex 1001.The opposing flat side surfaces 1005 intervene between the opposingconical side surfaces 1008, and also extend upwardly and inwardly fromor proximate the interface 1006 toward the apex 1001. A center of theapex 1001 may be laterally offset from a central longitudinal axis ofthe cutting element 1000. The apex 1001 may exhibit a circular lateralshape or a non-circular lateral shape (e.g., a laterally elongatedshape, such as a rectangular shape, a non-rectangular quadrilateralshape, an elliptical shape, etc.), and may be either arcuate (e.g.,non-planar, radiused, curved) or substantially flat (e.g.,two-dimensional, planar, non-radiused, non-arcuate, non-curved). One ofthe opposing conical side surfaces 1008 may be defined by at least oneangle θ between the conical side surface 1008 and a phantom line 1003(shown in FIG. 10 with dashed lines) longitudinally extending from alateral side surface of the supporting substrate 1004, and another ofthe opposing conical side surfaces 1008 may be defined by another angleless than the angle θ. The angle θ may be within a range of from about5° to about 85°, such as from about 15° to about 75°, from about 30° toabout 60°, or from about 45° to about 60°. The opposing flat sidesurfaces 1005 may individually be defined by at least one additionalangle between the flat side surface 1005 and the phantom line 1003,wherein the at least one additional angle is different than (e.g., lessthan or greater than) the angle θ. Interfaces between the opposingconical side surfaces 1008, the opposing flat side surfaces 1005, andthe apex 1001 may be smooth and transitioned (e.g., chamfered and/orradiused), or may be sharp (e.g., non-chamfered and non-radiused). Thecutting element 1000, including the cutting table 1002 and thesupporting substrate 1004 thereof, may be formed using one or moreprocesses substantially similar to those previously described withreference to FIGS. 3A through 5B (e.g., a process substantially similarto that previously described with reference to FIGS. 3A and 3B; aprocess substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 11 illustrates a simplified side elevation view of a cuttingelement 1100, in accordance with another embodiment of the disclosure.The cutting element 1100 includes a supporting substrate 1104, and acutting table 1102 attached to the supporting substrate 1104 at aninterface 1106. The cutting table 1102 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1104 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 11, the cutting table 1102 exhibits a chiselshape, and includes opposing conical side surfaces 1108, opposing flatside surfaces 1105, and an apex 1101 (e.g., tip) that at least partiallydefine a cutting face 1110 of the cutting table 1102. The configurationof the cutting table 1102 is similar to the configuration of the cuttingtable 1002 (FIG. 10) except that the apex 1101 of the cutting table 1102may extend non-perpendicular (e.g., non-orthogonal) to a centrallongitudinal axis of the cutting element 1100. For example, the apex1101 of the cutting table 1102 may exhibit a negative slope or apositive slope. The cutting element 1100, including the cutting table1102 and the supporting substrate 1104 thereof, may be formed using oneor more processes substantially similar to those previously describedwith reference to FIGS. 3A through 5B (e.g., a process substantiallysimilar to that previously described with reference to FIGS. 3A and 3B;a process substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 12 illustrates a simplified side elevation view of a cuttingelement 1200, in accordance with another embodiment of the disclosure.The cutting element 1200 includes a supporting substrate 1204, and acutting table 1202 attached to the supporting substrate 1204 at aninterface 1206. The cutting table 1202 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1204 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 12, the cutting table 1202 exhibits a generallyconical shape, and includes a semi-conical side surface 1208 and an apex1201 (e.g., tip) that at least partially define a cutting face 1210 ofthe cutting table 1202. The apex 1201 comprises an end of the cuttingtable 1202 opposing another end of the cutting table 1202 secured to thesupporting substrate 1204 at the interface 1206. The apex 1201 may besharp (e.g., non-radiused), and may be centered about a centrallongitudinal axis of the cutting element 1200. For example, the apex1201 may be a single (e.g., only one) point most distal from theinterface 1206 between the supporting substrate 1204 and a cutting table1202, or may be a single line most distal from the interface 1206between the supporting substrate 1204 and a cutting table 1202. Thesemi-conical side surface 1208 may include a first portion adjacent thesupporting substrate 1204 and extending substantially parallel to aphantom line 1203 (shown in FIG. 12 with dashed lines) longitudinallyextending from a lateral side surface of the supporting substrate 1204,and a second portion between the first portion and the apex 1201 andextending at an angle θ relative to the phantom line 1203. The angle θmay, for example, be within a range of from about 5° to about 85°, suchas from about 15° to about 75°, from about 30° to about 60°, or fromabout 45° to about 60°. The cutting element 1200, including the cuttingtable 1202 and the supporting substrate 1204 thereof, may be formedusing one or more processes substantially similar to those previouslydescribed with reference to FIGS. 3A through 5B (e.g., a processsubstantially similar to that previously described with reference toFIGS. 3A and 3B; a process substantially similar to that previouslydescribed with reference to FIGS. 4A and 4B; a process substantiallysimilar to that previously described with reference to FIGS. 5A and 5B).

FIG. 13 illustrates a simplified side elevation view of a cuttingelement 1300, in accordance with another embodiment of the disclosure.The cutting element 1300 includes a supporting substrate 1304, and acutting table 1302 attached to the supporting substrate 1304 at aninterface 1306. The cutting table 1302 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1304 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 13, the cutting table 1302 exhibits anon-cylindrical shape, and includes a semi-conical side surface 1308 andan apex 1301 (e.g., tip) that at least partially define a cutting face1310 of the cutting table 1302. The apex 1301 comprises an end of thecutting table 1302 opposing another end of the cutting table 1302secured to the supporting substrate 1304 at the interface 1306. The apex1301 may be sharp (e.g., non-radiused), and may be centered about acentral longitudinal axis of the cutting element 1300. For example, theapex 1301 may be a single (e.g., only one) point most distal from theinterface 1306 between the supporting substrate 1304 and a cutting table1302, or may be a single line most distal from the interface 1306between the supporting substrate 1304 and a cutting table 1302. Thesemi-conical side surface 1308 may include a first portion adjacent thesupporting substrate 1304 and extending substantially parallel to aphantom line 1303 (shown in FIG. 13 with dashed lines) longitudinallyextending from a lateral side surface of the supporting substrate 1304,a second portion adjacent the first portion and extending at an angle γrelative to the phantom line 1303, and a third portion between thesecond portion and the apex 1301 and extending at an angle θ relative tothe phantom line 1303. The angle θ between the third portion of thesemi-conical side surface 1308 and the phantom line 1303 may be greaterthan the angle γ between the second portion of the semi-conical sidesurface 1308 and the phantom line 1303. Each of the angle γ between thesecond portion of the semi-conical side surface 1308 and the phantomline 1303 and angle θ between the third portion of the semi-conical sidesurface 1308 and the phantom line 1303 may individually be within arange of from about 5° to about 85°. The cutting element 1300, includingthe cutting table 1302 and the supporting substrate 1304 thereof, may beformed using one or more processes substantially similar to thosepreviously described with reference to FIGS. 3A through 5B (e.g., aprocess substantially similar to that previously described withreference to FIGS. 3A and 3B; a process substantially similar to thatpreviously described with reference to FIGS. 4A and 4B; a processsubstantially similar to that previously described with reference toFIGS. 5A and 5B).

FIG. 14 illustrates a simplified side elevation view of a cuttingelement 1400, in accordance with another embodiment of the disclosure.The cutting element 1400 includes a supporting substrate 1404, and acutting table 1402 attached to the supporting substrate 1404 at aninterface 1406. The cutting table 1402 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1404 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 14, the cutting table 1402 exhibits anon-cylindrical shape, and includes a semi-conical side surface 1408 andan apex 1401 (e.g., tip) that at least partially define a cutting face1410 of the cutting table 1402. The apex 1401 comprises an end of thecutting table 1402 opposing another end of the cutting table 1402secured to the supporting substrate 1404 at the interface 1406. The apex1401 may be radiused (e.g., arcuate, curved), and may be centered abouta central longitudinal axis of the cutting element 1400. Thesemi-conical side surface 1408 may include a first portion adjacent thesupporting substrate 1404 and extending substantially parallel to aphantom line 1403 (shown in FIG. 14 with dashed lines) longitudinallyextending from a lateral side surface of the supporting substrate 1404,and a second portion between the first portion and the apex 1401 andextending at an angle θ relative to the phantom line 1403. The angle θmay, for example, be within a range of from about 5° to about 85°, suchas from about 15° to about 75°, from about 30° to about 60°, or fromabout 45° to about 60°. The cutting element 1400, including the cuttingtable 1402 and the supporting substrate 1404 thereof, may be formedusing one or more processes substantially similar to those previouslydescribed with reference to FIGS. 3A through 5B (e.g., a processsubstantially similar to that previously described with reference toFIGS. 3A and 3B; a process substantially similar to that previouslydescribed with reference to FIGS. 4A and 4B; a process substantiallysimilar to that previously described with reference to FIGS. 5A and 5B).

FIG. 15 illustrates a simplified side elevation view of a cuttingelement 1500, in accordance with another embodiment of the disclosure.The cutting element 1500 includes a supporting substrate 1504, and acutting table 1502 attached to the supporting substrate 1504 at aninterface 1506. The cutting table 1502 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1504 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 15, the cutting table 1502 exhibits a generallyhemispherical shape, and includes a semi-hemispherical side surface 1508and an apex 1501 (e.g., tip) that at least partially define a cuttingface 1510 of the cutting table 1502. The apex 1501 comprises an end ofthe cutting table 1502 opposing another end of the cutting table 1502secured to the supporting substrate 1504 at the interface 1506. The apex1501 may be radiused (e.g., arcuate, curved), and may be centered abouta central longitudinal axis of the cutting element 1500. Thesemi-hemispherical side surface 1508 may include a first portionadjacent the supporting substrate 1504 and extending substantiallyparallel to a lateral side surface of the supporting substrate 1504, anda second portion extending in an arcuate (e.g., curved) path between thefirst portion and the apex 1501. The cutting element 1500, including thecutting table 1502 and the supporting substrate 1504 thereof, may beformed using one or more processes substantially similar to thosepreviously described with reference to FIGS. 3A through 5B (e.g., aprocess substantially similar to that previously described withreference to FIGS. 3A and 3B; a process substantially similar to thatpreviously described with reference to FIGS. 4A and 4B; a processsubstantially similar to that previously described with reference toFIGS. 5A and 5B).

FIG. 16 illustrates a simplified side elevation view of a cuttingelement 1600, in accordance with another embodiment of the disclosure.The cutting element 1600 includes a supporting substrate 1604, and acutting table 1602 attached to the supporting substrate 1604 at aninterface 1606. The cutting table 1602 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1604 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 16, the cutting table 1602 exhibits asemi-hemispherical shape, and includes a semi-hemispherical side surface1608, a flat side surface 1607, and an apex 1601 (e.g., tip) that atleast partially define a cutting face 1610 of the cutting table 1602.The apex 1601 comprises an end of the cutting table 1602 opposinganother end of the cutting table 1602 secured to the supportingsubstrate 1604 at the interface 1606. The semi-hemispherical sidesurface 1608 extends upwardly and inwardly from or proximate theinterface 1606 toward the apex 1601. The flat side surface 1607 opposesthe semi-hemispherical side surface 1608, and also extends upwardly andinwardly from or proximate the interface 1606 toward the apex 1601. Theapex 1601 may be centered a longitudinal axis of the cutting element1600. The semi-hemispherical side surface 1608 may include a firstportion adjacent the supporting substrate 1604 and extendingsubstantially parallel to a lateral side surface of the supportingsubstrate 1604, and a second portion extending in an arcuate (e.g.,curved) path between the first portion and the apex 1601. The flat sidesurface 1607 may be substantially planar, and may be angled relative toa lateral side surface of the supporting substrate 1604. Interfacesbetween the semi-hemispherical side surface 1608, the flat side surface1607, and the apex 1601 may be smooth and transitioned (e.g., chamferedand/or radiused), or may be sharp (e.g., non-chamfered andnon-radiused). The cutting element 1600, including the cutting table1602 and the supporting substrate 1604 thereof, may be formed using oneor more processes substantially similar to those previously describedwith reference to FIGS. 3A through 5B (e.g., a process substantiallysimilar to that previously described with reference to FIGS. 3A and 3B;a process substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 17 illustrates a simplified side elevation view of a cuttingelement 1700, in accordance with another embodiment of the disclosure.The cutting element 1700 includes a supporting substrate 1704, and acutting table 1702 attached to the supporting substrate 1704 at aninterface 1706. The cutting table 1702 may have a material compositionand a material distribution substantially similar to the materialcomposition and the material distribution of the cutting table 102previously described with reference to FIGS. 1 and 2. In addition, thesupporting substrate 1704 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of one or more of the supporting substrates 104,304, 404, 504 previously described with reference to FIGS. 1, 3A, 4A,and 5A. As shown in FIG. 17, the cutting table 1702 exhibits asemi-hemispherical shape, and includes a semi-hemispherical side surface1708, a flat side surface 1707, and an apex 1701 (e.g., tip) that atleast partially define a cutting face 1710 of the cutting table 1702.The configuration of the cutting table 1702 is similar to theconfiguration of the cutting table 1602 (FIG. 16) except that the apex1701 of the cutting table 1702 is laterally offset from a centrallongitudinal axis of the cutting element 1700. Laterally offsetting theapex 1701 from the central longitudinal axis of the cutting element 1700may extend the dimensions of the semi-hemispherical side surface 1708relative to those of the semi-hemispherical side surface 1408 (FIG. 14)of the cutting element 1400 (FIG. 14), and may reduce the dimensions andangle of the flat side surface 1707 relative to those of the flat sidesurface 1607 (FIG. 16) of the cutting element 1600 (FIG. 16). Thecutting element 1700, including the cutting table 1702 and thesupporting substrate 1704 thereof, may be formed using one or moreprocesses substantially similar to those previously described withreference to FIGS. 3A through 5B (e.g., a process substantially similarto that previously described with reference to FIGS. 3A and 3B; aprocess substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

The methods of the disclosure may also be employed to form structuresother than cutting elements. Namely, the methods of the disclosure maybe used whenever it is desired to form a structure or device including atable of hard material, such as diamond table (e.g., PDC table). Themethods of disclosure may, for example, be employed to form variousother structures associated with (e.g., employed in) downholeoperations, such as bearing structures (e.g., bearing pads, bearingdiscs, bearing blocks, bearing sleeves), wear structures (e.g., wearpads, wear discs, wear block), block structures, die structures (e.g.,tool die structures, wire die structures), and/or other structures. Byway of non-limiting example, FIGS. 18 and 19 show additional structures(e.g., a bearing structure, a die structure) that may be formed inaccordance with embodiments of the disclosure.

FIG. 18 illustrates a perspective view of a bearing structure 1800, inaccordance with another embodiment of the disclosure. The bearingstructure 1800 includes a supporting substrate 1804, and a hard materialtable 1802 (e.g., PDC table) attached to the supporting substrate 1804at an interface 1806. The hard material table 1802 may have a materialcomposition and a material distribution substantially similar to thematerial composition and the material distribution of the cutting table102 previously described with reference to FIGS. 1 and 2. In addition,the supporting substrate 1804 may have a material composition and amaterial distribution substantially similar to the material compositionand the material distribution of one or more of the supportingsubstrates 104, 304, 404, 504 previously described with reference toFIGS. 1, 3A, 4A, and 5A. The bearing structure 1800 may exhibit anydesired peripheral geometric configuration (e.g., peripheral shape andperipheral size) suitable for a predetermined use of the bearingstructure 1800. By way of non-limiting example, as shown in FIG. 18, thebearing structure 1800 may exhibit an elongate 3D shape, such as anellipsoidal cylinder shape. In additional embodiments, the bearingstructure 1800 may exhibit a different peripheral shape (e.g., arectangular cylinder shape; circular cylinder shape; a conical shape; afrusto-conical shape; truncated versions thereof; or an irregular shape,such as a complex shape complementary to a recess or socket in anearth-boring tool to receive and hold the bearing structure 1800). Inaddition, the interface 1806 between the supporting substrate 1804 andthe hard material table 1802 may be substantially planar, or may benon-planar (e.g., curved, angled, jagged, sinusoidal, V-shaped,U-shaped, irregularly shaped, combinations thereof, etc.). The bearingstructure 1800, including the hard material table 1802 and thesupporting substrate 1804 thereof, may be formed using one or moreprocesses substantially similar to those previously described withreference to FIGS. 3A through 5B (e.g., a process substantially similarto that previously described with reference to FIGS. 3A and 3B; aprocess substantially similar to that previously described withreference to FIGS. 4A and 4B; a process substantially similar to thatpreviously described with reference to FIGS. 5A and 5B).

FIG. 19 illustrates a perspective view of die structure 1900, inaccordance with another embodiment of the disclosure. The die structure1900 includes a hard material table 1902 (e.g., PDC table), wherein thehard material table 1902 may have a material composition and a materialdistribution substantially similar to the material composition and thematerial distribution of the cutting table 102 previously described withreference to FIGS. 1 and 2. The die structure 1900 may exhibit anydesired peripheral geometric configuration (e.g., peripheral shape andperipheral size) suitable for a predetermined use of the die structure1900, such as a peripheral geometric configuration complementary toformation of another structure (e.g., an earth-boring tool structure, awire structure) having a desired and predetermined peripheral geometricconfiguration. By way of non-limiting example, as shown in FIG. 19, thedie structure 1900 may exhibit an at least partially (e.g.,substantially) hollow elongate 3D shape, such as a tubular shape. Inadditional embodiments, the die structure 1900 may exhibit a differentperipheral shape, such as an at least partially hollow form of aconical, cubic, cuboidal, cylindrical, semi-cylindrical, spherical,semi-spherical, triangular prismatic, or irregular shape. The diestructure 1900, including the hard material table 1902 thereof, may beformed using one or more processes substantially similar to thosepreviously described with reference to FIGS. 3A through 5B (e.g., aprocess substantially similar to that previously described withreference to FIGS. 3A and 3B; a process substantially similar to thatpreviously described with reference to FIGS. 4A and 4B; a processsubstantially similar to that previously described with reference toFIGS. 5A and 5B).

Embodiments of cutting elements (e.g., the cutting elements 100, 600,700, 800, 900, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700illustrated in FIGS. 1 and 6 through 17) described herein may be securedto an earth-boring tool and used to remove subterranean formationmaterial in accordance with additional embodiments of the disclosure.The earth-boring tool may, for example, be a rotary drill bit, apercussion bit, a coring bit, an eccentric bit, a reamer tool, a millingtool, etc. As a non-limiting example, FIG. 20 illustrates a fixed-cuttertype earth-boring rotary drill bit 2000 that includes cutting elements2002. One or more of the cutting elements 2002 may be substantiallysimilar to one or more of the cutting elements 100, 600, 700, 800, 900,1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700 previously describedherein with respect to FIGS. 1 and 6 through 17, and may be formed inaccordance to the processes previously described herein with referenceto FIGS. 3A through 5B (e.g., a process substantially similar to thatpreviously described with reference to FIGS. 3A and 3B; a processsubstantially similar to that previously described with reference toFIGS. 4A and 4B; a process substantially similar to that previouslydescribed with reference to FIGS. 5A and 5B). The rotary drill bit 2000includes a bit body 2004, and the cutting elements 2002 are attached tothe bit body 2004. The cutting elements 2002 may, for example, bebrazed, welded, or otherwise secured, within pockets formed in an outersurface of the bit body 2004. Optionally, the rotary drill bit 2000 mayalso include one or more other structures (e.g., bearing structures,wear structures, block structures) formed according to embodiments ofthe disclosure, such as the bearing structure 1800 previously describedherein with respect to FIG. 18.

The following example serves to explain some embodiments of the presentdisclosure in more detail. The example is not to be construed as beingexhaustive or exclusive as to the scope of the disclosure.

Example

The stabilities (e.g., thermal stabilities, and mechanical stabilities)of different κ-carbide precipitates were evaluated using ViennaAb-initio computer simulation package (VASP) methodologies. The analysisevaluated enthalpy of formation and eigenvalue from Young's moduluscalculation for the different κ-carbide precipitates. Table 1 belowsummarizes the results of the analysis. As shown in Table 1, theκ-carbide precipitates each had an enthalpy of formation that was lessthan zero (indicating that the κ-carbide precipitate is thermallystable). In addition, each of the κ-carbide precipitates listed in Table1 had an eigenvalue from a Young's modulus calculation that was positive(indicating that the κ-carbide precipitate is mechanically stable). Theresults indicate that each of the κ-carbide precipitates listed in Table1 are stable and suitable for inclusion in a thermally stable materialof a hard material structure (e.g., cutting table) for use in anearth-boring tool.

TABLE 1 κ- κ- κ- carbide Enthalpy of carbide Enthalpy of carbideEnthalpy of precip- Formation precip- Formation precip- Formation itate(KJ/mol) itate (KJ/mol) itate (KJ/mol) Sm₃SnC −704.822 Sm₃BiC −698.476Sm₃TeC −680.23 Sm₃PC −628.793 Sm₃SiC −605.694 Sm₃GaC −456.928 Sc₃SnC−401.508 Sc₃GeC −392.05 Sc₃SbC −378.622 Sc₃AsC −374.565 Sm₃BeC −368.085Sc₃PC −361.205 Sc₃SiC −354.422 Y₃SnC −350.531 Sc₃BiC −344.436 Tm₃SnC−342.149 Er₃SnC −339.945 Sc₃TeC −339.294 Y₃SbC −336.165 Sc₃SeC −336.02Ho₃SnC −336 Sc₃GaC −333.574 Dy₃SnC −330.185 Y₃BiC −325.21 Tb₃SnC−322.851 Tm₃SbC −321.617 Er₃SbC −321.554 Lu₃SbC −320.949 Lu₃GeC −317.071Ti₃GaC −314.641 Ti₃GeC −314.539 Gd₃SnC −312.478 Tb₃SbC −312.211 Y₃GeC−311.336 Er₃BiC −310.831 Ho₃BiC −310.214 Tm₃BiC −309.923 Lu₃AsC −309.917Tm₃GeC −308.447 Dy₃BiC −307.974 Lu₃BiC −306.895 Tm₃AsC −305.001 Tb₃BiC−304.29 Ti₃SnC −303.132 Er₃AsC −302.427 Ti₃SiC −301.968 Y₃TeC −299.938Gd₃BiC −297.664 Ce₃TeC −296.429 Ti₃AlC −295.679 Zr₃SnC −293.917 Dy₃AsC−292.429 La₃BiC −292.319 Sc₃AlC −291.925 Yb₃SeC −286.034 Tb₃AsC −284.901Lu₃PC −282.484 Yb₃TeC −282.293 Lu₃SnC −281.097 Eu₃SeC −278.937 Er₃TeC−278.876 Ti₃SbC −276.999 Lu₃SiC −276.354 Tm₃TeC −276.141 Tm₃PC −275.024Gd₃TeC −274.579 Gd₃AsC −274.349 Zr₃SbC −274.346 Lu₃GaC −271.369 Er₃PC−271.368 Sm₃BC −270.449 Lu₃TeC −270.02 Ho₃PC −266.29 Tm₃SiC −265.632Er₃SiC −260.226 Dy₃PC −259.237 Tm₃GaC −256.175 Ce₃AsC −254.551 Y₃GaC−253.35 Ho₃SiC −253.253 Tb₃PC −250.6 Er₃GaC −248.557 Dy₃SiC −244.364Eu₃BiC −242.797 Hf₃GaC −240.6 Ho₃GaC −239.225 Gd₃PC −238.928 Gd₃SeC−237.084 Lu₃AlC −236.831 Ce₃SnC −235.456 Tb₃SiC −233.924 Hf₃SnC −231.962Dy₃GaC −228.5 Tm₃AlC −222.698 Gd₃SiC −220.401 Ti₃BiC −216.955 Tb₃GaC−216.845 Er₃AlC −215.553 Yb₃BiC −215.171 Yb₃SbC −215.169 La₃PC −215.099Eu₃AsC −214.244 Fe₃AlC −210.127 Ho₃AlC −206.657 Gd₃GaC −202.834 Yb₃AsC−202.589 Th₃BiC −198.184 Ac₃SbC −194.323 Th₃SnC −193.111 Tb₃AlC −185.118Eu₃PC −184.188 Fe₃SiC −183.358 Ti₃BeC −182.722 Yb₃PC −177.404 Gd₃AlC−171.312 Hf₃PC −169.998 V₃SiC −167.077 Ce₃SiC −160.936 V₃GeC −156.93Fe₃GaC −154.834 Rh₃AlC −154.2 Th₃GeC −147.293 V₃AlC −145.097 Fe₃GeC−142.829 V₃GaC −141.158 Th₃PC −135.138 V₃PC −132.001 V₃SnC −122.954Fe₃SnC −121.707 Zr₃BeC −120.908 Hf₃BeC −118.593 Nb₃GaC −116.249 Sc₃BeC−115.788 Th₃AlC −115.145 V₃SbC −112.187 Ce₃AlC −109.525 V₃AsC −108.401Ni₃AlC −107.311 Ti₃BC −90.6332 Rh₃GaC −87.8091 Fe₃BeC −81.5766 Fe₃SbC−79.5255 Sc₃BC −75.0164 U₃PC −74.7 Fe₃PC −71.9518 Hf₃BiC −65.1081 V₃BeC−60.2572 V₃TeC −57.678 Ni₃GaC −55.3182 Lu₃BeC −53.9309 Mn₃AlC −53.5059Ru₃AlC −52.9992 Fe₃AsC −51.9214 Ta₃SnC −48.3087 Mn₃SiC −47.6618 V₃SeC−44.3932 U₃SeC −43.7951 U₃SiC −34.204 Cr₃SiC −31.172 V₃BiC −26.412Tc₃AlC −23.8878 La₃SiC −21.94 Rh₃SnC −20.2771 Cr₃AlC −19.8249 U₃AsC−14.1404 Mn₃GaC −13.0819 Th₃SiC −11.3861 Rh₃BeC −10.6868 Ni₃BeC −8.44939Mn₃GeC −7.60212 Cr₃GeC −4.23139 Pd₃AlC −2.3424 Cr₃GaC −0.66372 Co3AlC−157.648 Co3GaC −100.221 Co3SiC −66.0251 Co3SnC −42.3607 Co3BeC −41.6805Co3GeC −37.7468

While the disclosure is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, the disclosure is not limited to the particular formsdisclosed. Rather, the disclosure is to cover all modifications,equivalents, and alternatives falling within the scope of the followingappended claims and their legal equivalent. For example, elements andfeatures disclosed in relation to one embodiment may be combined withelements and features disclosed in relation to other embodiments of thedisclosure.

What is claimed is:
 1. A cutting element, comprising: a cutting tablecomprising: inter-bonded diamond particles; and a thermally stablematerial within interstitial spaces between the inter-bonded diamondparticles, the thermally stable material comprising a carbideprecipitate having the general chemical formula:A₃XZ_(1-n), where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co,Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os,Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi,Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater thanor equal to 0 and less than or equal to 0.75.
 2. The cutting element ofclaim 1, wherein the carbide precipitate comprises a ternary κ-carbideprecipitate comprising: only one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt,Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac,Th, Pa, and U occupying all A sites; only one of Al, Ga, Sn, Be, Bi, Te,Sb, Se, As, Ge, Si, B, and P occupying all X sites; and C occupying atleast some Z sites.
 3. The cutting element of claim 1, wherein thecarbide precipitate comprises a quaternary κ-carbide precipitatecomprising: only one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr,Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La,Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, andU occupying all A sites; two of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge,Si, B, and P occupying X sites; and C occupying at least some Z sites.4. The cutting element of claim 1, wherein the carbide precipitate isselected from Sm₃SnC_(1-n), Sm₃BiC_(1-n), Sm₃TeC_(1-n), Sm₃PC_(1-n),Sm₃SiC_(1-n), Sm₃GaC_(1-n), Sc₃SnC_(1-n), Sc₃GeC_(1-n), Sc₃SbC_(1-n),Sc₃AsC_(1-n), Sm₃BeC_(1-n), Sc₃PC_(1-n), Sc₃SiC_(1-n), Y₃SnC_(1-n),Sc₃BiC_(1-n), Tm₃SnC_(1-n), Er₃SnC_(1-n), Sc₃TeC_(1-n), Y₃SbC_(1-n),Sc₃SeC_(1-n), Ho₃SnC_(1-n), Sc₃GaC_(1-n), Dy₃SnC_(1-n), Y₃BiC_(1-n),Tb₃SnC_(1-n), Tm₃SbC_(1-n), Er₃SbC_(1-n), Lu₃SbC_(1-n), Lu₃GeC_(1-n),Ti₃GaC_(1-n), Ti₃GeC_(1-n), Gd₃SnC_(1-n), Tb₃SbC_(1-n), Y₃GeC_(1-n),Er₃BiC_(1-n), Ho₃BiC_(1-n), Tm₃BiC_(1-n), Lu₃AsC_(1-n), Tm₃GeC_(1-n),Dy₃BiC_(1-n), Lu₃BiC_(1-n), Tm₃AsC_(1-n), Tb₃BiC_(1-n), Ti₃SnC_(1-n),Er₃AsC_(1-n), Ti₃SiC_(1-n), Y₃TeC_(1-n), Gd₃BiC_(1-n), Ce₃TeC_(1-n),Ti₃AlC_(1-n), Zr₃SnC_(1-n), Dy₃AsC_(1-n), La₃BiC_(1-n), Sc₃AlC_(1-n),Yb₃SeC_(1-n), Tb₃AsC_(1-n), Lu₃PC_(1-n), Yb₃TeC_(1-n), Lu₃SnC_(1-n),Eu₃SeC_(1-n), Er₃TeC_(1-n), Ti₃SbC_(1-n), Lu₃SiC_(1-n), Tm₃TeC_(1-n),Tm₃PC_(1-n), Gd₃TeC_(1-n), Gd₃AsC_(1-n), Zr₃SbC_(1-n), Lu₃GaC_(1-n),Er₃PC_(1-n), Sm₃BC_(1-n), Lu₃TeC_(1-n), Ho₃PC_(1-n), Tm₃SiC_(1-n),Er₃SiC_(1-n), Dy₃PC_(1-n), Tm₃GaC_(1-n), Ce₃AsC_(1-n), Y₃GaC_(1-n),Ho₃SiC_(1-n), Tb₃PC_(1-n), Er₃GaC_(1-n), Dy₃SiC_(1-n), Eu₃BiC_(1-n),Hf₃GaC_(1-n), Ho₃GaC_(1-n), Gd₃PC_(1-n), Gd₃SeC_(1-n), Lu₃AlC_(1-n),Ce₃SnC_(1-n), Tb₃SiC_(1-n), Hf₃SnC_(1-n), Dy₃GaC_(1-n), Tm₃AlC_(1-n),Gd₃SiC_(1-n), Ti₃BiC_(1-n), Tb₃GaC_(1-n), Er₃AlC_(1-n), Yb₃BiC_(1-n),Yb₃SbC_(1-n), La₃PC_(1-n), Eu₃AsC_(1-n), Fe₃AlC_(1-n), Ho₃AlC_(1-n),Gd₃GaC_(1-n), Yb₃AsC_(1-n), Th₃BiC_(1-n), Ac₃SbC_(1-n), Th₃SnC_(1-n),Tb₃AlC_(1-n), Eu₃PC_(1-n), Fe₃SiC_(1-n), Ti₃BeC_(1-n), Yb₃PC_(1-n),Gd₃AlC_(1-n), Hf₃PC_(1-n), V₃SiC_(1-n), Ce₃SiC_(1-n), V₃GeC_(1-n),Fe₃GaC_(1-n), Rh₃AlC_(1-n), Th₃GeC_(1-n), V₃AlC_(1-n), Fe₃GeC_(1-n),V₃GaC_(1-n), Th₃PC_(1-n), V₃SnC_(1-n), V₃SnC_(1-n), Fe₃SnC_(1-n),Zr₃BeC_(1-n), Hf₃BeC_(1-n), Nb₃GaC_(1-n), Sc₃BeC_(1-n), Th₃AlC_(1-n),V₃SbC_(1-n), Ce₃AlC_(1-n), Co₃AlC_(1-n), V₃AsC_(1-n), Ni₃AlC_(1-n),Co₃GaC_(1-n), Ti₃BC_(1-n), Rh₃GaC_(1-n), Fe₃BeC_(1-n), Fe₃SbC_(1-n),Sc₃BC_(1-n), U₃PC_(1-n), Fe₃PC_(1-n), Co₃SiC_(1-n), Hf₃BiC_(1-n),V₃BeC_(1-n), V₃TeC_(1-n), Ni₃GaC_(1-n), Lu₃BeC_(1-n), Mn₃AlC_(1-n),Ru₃AlC_(1-n), Fe₃AsC_(1-n), Ta₃SnC_(1-n), Mn₃SiC_(1-n), V₃SeC_(1-n),U₃SeC_(1-n), Co₃SnC_(1-n), Co₃BeC_(1-n), Co₃GeC_(1-n), Cr₃SiC_(1-n),V₃BiC_(1-n), Tc₃AlC_(1-n), La₃SiC_(1-n), Rh₃SnC_(1-n), Cr₃AlC_(1-n),U₃AsC_(1-n), Mn₃GaC_(1-n), Th₃SiC_(1-n), Rh₃BeC_(1-n), Ni₃BeC_(1-n),Mn₃GeC_(1-n), Cr₃GeC_(1-n), Pd₃AlC_(1-n), and Cr₃GaC_(1-n), wherein0≤n≤0.75.
 5. The cutting element of claim 1, wherein the carbideprecipitate comprises a non-κ-carbide precipitate.
 6. The cuttingelement of claim 1, wherein the carbide precipitate is substantiallyfree of Co.
 7. The cutting element of claim 1, wherein the thermallystable material further comprises one or more of an FCC L1₂ phaseprecipitate, an FCC DO₂₂ phase precipitate, a D8₅ phase precipitate, aDO₁₉ phase precipitate, a BCC/B2 phase precipitate, and an FCC L1₀ phaseprecipitate.
 8. The cutting element of claim 1, further comprising asupporting substrate directly attached to an end of the cutting table.9. The cutting element of claim 7, wherein the supporting substratecomprises: a homogenized binder comprising C, W, one or more of Sc, Ti,V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd,Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy,Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and one or more of Al, Ga, Sn,Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; and WC particles dispersed inthe homogenized binder.
 10. The cutting element of claim 8, wherein thehomogenized binder has a melting temperature greater than or equal toabout 750° C.
 11. The cutting element of claim 8, wherein thehomogenized binder comprises a substantially homogeneous peritecticalloy.
 12. The cutting element of claim 8, wherein the homogenizedbinder is substantially free of Co.
 13. The cutting element of claim 1,wherein: a ratio of a combined height of the supporting substrate andthe cutting table to a maximum outer diameter of the cutting table iswithin a range of from about 0.1 to about 50; and the cutting tableexhibits a maximum thickness within a range of from about 0.3 mm toabout 5 mm.
 14. The cutting element of claim 1, wherein the cuttingtable exhibits one or more of radiused edges and chamfered edges. 15.The cutting element of claim 1, wherein the cutting table comprises: anapex; and at least one side surface extending from at least one locationat or proximate an interface between the supporting substrate and thecutting table toward the apex, the at least one side surface extendingat one or more angles within a range of from about 5 degrees to about 85degrees relative to a side surface of the supporting substrate.
 16. Thecutting element of claim 14, wherein the at least one side surface ofthe cutting table comprises: at least one conical side surface extendingupwardly and inwardly from at least one location at or proximate aninterface between the supporting substrate and the cutting table towardthe apex; and at least one flat side surface adjacent the at least oneconical side surface and extending upwardly and inwardly from at leastone additional location at or proximate the interface between thesupporting substrate and the cutting table toward the apex.
 17. Anearth-boring tool comprising the cutting element of claim
 1. 18. Amethod of forming a cutting element, comprising: providing adiamond-containing material comprising discrete diamond particles over asubstrate; sintering the diamond-containing material in the presence ofa liquid phase of a homogenized alloy comprising at least one firstelement selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb,Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr,Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, andat least one second element selected from Al, Ga, Sn, Be, Bi, Te, Sb,Se, As, Ge, Si, B, and P to inter-bond the discrete diamond particles;and converting portions of the homogenized alloy within interstitialspaces between the inter-bonded diamond particles into a thermallystable material comprising one or more carbide precipitates having thegeneral chemical formula:A₃XZ_(1-n), where A comprises the at least one first element; Xcomprises the at least one second element; Z comprises C; and n isgreater than or equal to 0 and less than or equal to 0.75.
 19. Themethod of claim 18, further comprising formulating the homogenized alloyto have an amount of the at least one second element capable ofsubstantially suppressing reactions between the at least one firstelement and C that would otherwise form a binary carbide when thediscrete diamond particles of the diamond-containing material areexposed to the liquid phase of the homogenized alloy.
 20. The method ofclaim 18, further comprising formulating the homogenized alloy tosubstantially free of Co.
 21. The method of claim 18, wherein: providinga diamond-containing material over a substrate comprises providing thediamond-containing material directly on a supporting substratecomprising a homogenized binder comprising C, W, the at least one firstelement, and the at least one second element, and WC particles dispersedwithin the homogenized binder; and sintering the diamond-containingmaterial in the presence of a liquid phase of a homogenized alloycomprises subjecting the supporting substrate and the diamond-containingmaterial to elevated temperatures and elevated pressures to melt anddiffuse a portion of the homogenized binder of the supporting substrateinto the diamond-containing material and catalyze the formation of theinter-bonded diamond particles.
 22. The method of claim 21, furthercomprising selecting the homogenized binder of the supporting substrateto have a melting temperature greater than or equal to about 750° C. 23.The method of claim 21, further comprising forming thediamond-containing material to comprise the discrete diamond particlesand discrete alloy particles individually comprising the at least onefirst element and the at least one second element, and wherein sinteringthe diamond-containing material in the presence of a liquid phase of ahomogenized alloy comprises subjecting the diamond-containing materialto elevated temperatures and elevated pressures to melt the discretealloy particles and catalyze the formation of the inter-bonded diamondparticles.
 24. The method of claim 23, further comprising selecting thediscrete alloy particles to individually comprise a homogenized alloyselected from Sm₃Sn, Sm₃Bi, Sm₃Te, Sm₃P, Sm₃Si, Sm₃Ga, Sc₃Sn, Sc₃Ge,Sc₃Sb, Sc₃As, Sm₃Be, Sc₃P, Sc₃Si, Y₃Sn, Sc₃Bi, Tm₃Sn, Er₃Sn, Sc₃Te,Y₃Sb, Sc₃S e, Ho₃Sn, Sc₃Ga, Dy₃Sn, Y₃Bi, Tb₃Sn, Tm₃Sb, Er₃Sb, Lu₃Sb,Lu₃Ge, Ti₃Ga, Ti₃Ge, Gd₃Sn, Tb₃Sb, Y₃Ge, Er₃Bi, Ho₃Bi, Tm₃Bi, Lu₃As,Tm₃Ge, Dy₃Bi, Lu₃Bi, Tm₃As, Tb₃Bi, Ti₃Sn, Er₃As, Ti₃Si, Y₃Te, Gd₃Bi,Ce₃Te, Ti₃Al, Zr₃Sn, Dy₃As, La₃Bi, Sc₃Al, Yb₃Se, Tb₃As, Lu₃P, Yb₃Te,Lu₃Sn, Eu₃Se, Er₃Te, Ti₃Sb, Lu₃Si, Tm₃Te, Tm₃P, Gd₃Te, Gd₃As, Zr₃Sb,Lu₃Ga, Er₃P, Sm₃B, Lu₃Te, Ho₃P, Tm₃Si, Er₃Si, Dy₃P, Tm₃Ga, Ce₃As, Y₃Ga,Ho₃Si, Tb₃P, Er₃Ga, Dy₃Si, Eu₃Bi, Hf₃Ga, Ho₃Ga, Gd₃P, Gd₃Se, Lu₃Al,Ce₃Sn, Tb₃Si, Hf₃Sn, Dy₃Ga, Tm₃Al, Gd₃Si, Ti₃Bi, Tb₃Ga, Er₃Al, Yb₃Bi,Yb₃Sb, La₃P, Eu₃As, Fe₃Al, Ho₃Al, Gd₃Ga, Yb₃As, Th₃Bi, Ac₃Sb, Th₃Sn,Tb₃Al, Eu₃P, Fe₃Si, Ti₃Be, Yb₃P, Gd₃Al, Hf₃P, V₃Si, Ce₃Si, V₃Ge, Fe₃Ga,Rh₃Al, Th₃Ge, V₃Al, Fe₃Ge, V₃Ga, Th₃P, V₃P, V₃Sn, Fe₃Sn, Zr₃Be, Hf₃Be,Nb₃Ga, Sc₃Be, Th₃Al, V₃Sb, Ce₃Al, Co₃Al, V₃As, Ni₃Al, Co₃Ga, Ti₃B,Rh₃Ga, Fe₃Be, Fe₃Sb, Sc₃B, U₃P, Fe₃P, Co₃Si, Hf₃Bi, V₃Be, V₃Te, Ni₃Ga,Lu₃Be, Mn₃Al, Ru₃Al, Fe₃As, Ta₃Sn, Mn₃Si, V₃Se, U₃Se, Co₃Sn, Co₃Be,Co₃Ge, U₃Si, Cr₃Si, V₃Bi, Tc₃Al, La₃Si, Rh₃Sn, Cr₃Al, U₃As, Mn₃Ga,Th₃Si, Rh₃Be, Ni₃Be, Mn₃Ge, Cr₃Ge, Pd₃Al, and Cr₃Ga.
 25. The method ofclaim 19, further comprising providing an alloy material comprising asubstantially homogeneous alloy of the at least one first element andthe at least one second element directly adjacent one or more outermostboundaries of the diamond-containing material, and wherein sintering thediamond-containing material in the presence of a liquid phase of ahomogenized alloy comprises subjecting the diamond-containing materialand the alloy material to elevated temperatures and elevated pressuresto melt and diffuse a portion of the substantially homogeneous alloy ofthe alloy material into the diamond-containing material and catalyze theformation of the inter-bonded diamond particles.
 26. The method of claim25, further comprising selecting the substantially homogeneous alloyfrom Sm₃Sn, Sm₃Bi, Sm₃Te, Sm₃P, Sm₃Si, Sm₃Ga, Sc₃Sn, Sc₃Ge, Sc₃Sb,Sc₃As, Sm₃Be, Sc₃P, Sc₃Si, Y₃Sn, Sc₃Bi, Tm₃Sn, Er₃Sn, Sc₃Te, Y₃Sb,Sc₃Se, Ho₃Sn, Sc₃Ga, Dy₃Sn, Y₃Bi, Tb₃Sn, Tm₃Sb, Er₃Sb, Lu₃Sb, Lu₃Ge,Ti₃Ga, Ti₃Ge, Gd₃Sn, Tb₃Sb, Y₃Ge, Er₃Bi, Ho₃Bi, Tm₃Bi, Lu₃As, Tm₃Ge,Dy₃Bi, Lu₃Bi, Tm₃As, Tb₃Bi, Ti₃Sn, Er₃As, Ti₃Si, Y₃Te, Gd₃Bi, Ce₃Te,Ti₃Al, Zr₃Sn, Dy₃As, La₃Bi, Sc₃Al, Yb₃Se, Tb₃As, Lu₃P, Yb₃Te, Lu₃Sn,Eu₃Se, Er₃Te, Ti₃Sb, Lu₃Si, Tm₃Te, Tm₃P, Gd₃Te, Gd₃As, Zr₃Sb, Lu₃Ga,Er₃P, Sm₃B, Lu₃Te, Ho₃P, Tm₃Si, Er₃Si, Dy₃P, Tm₃Ga, Ce₃As, Y₃Ga, Ho₃Si,Tb₃P, Er₃Ga, Dy₃Si, Eu₃Bi, Hf₃Ga, Ho₃Ga, Gd₃P, Gd₃Se, Lu₃Al, Ce₃Sn,Tb₃Si, Hf₃Sn, Dy₃Ga, Tm₃Al, Gd₃Si, Ti₃Bi, Tb₃Ga, Er₃Al, Yb₃Bi, Yb₃Sb,La₃P, Eu₃As, Fe₃Al, Ho₃Al, Gd₃Ga, Yb₃As, Th₃Bi, Ac₃Sb, Th₃Sn, Tb₃Al,Eu₃P, Fe₃Si, Ti₃Be, Yb₃P, Gd₃Al, Hf₃P, V₃Si, Ce₃Si, V₃Ge, Fe₃Ga, Rh₃Al,Th₃Ge, V₃Al, Fe₃Ge, V₃Ga, Th₃P, V₃P, V₃Sn, Fe₃Sn, Zr₃Be, Hf₃Be, Nb₃Ga,Sc₃Be, Th₃Al, V₃Sb, Ce₃Al, Co₃Al, V₃As, Ni₃Al, Co₃Ga, Ti₃B, Rh₃Ga,Fe₃Be, Fe₃Sb, Sc₃B, U₃P, Fe₃P, Co₃Si, Hf₃Bi, V₃Be, V₃Te, Ni₃Ga, Lu₃Be,Mn₃Al, Ru₃Al, Fe₃As, Ta₃Sn, Mn₃Si, V₃Se, U₃Se, Co₃Sn, Co₃Be, Co₃Ge,U₃Si, Cr₃Si, V₃Bi, Tc₃Al, La₃Si, Rh₃Sn, Cr₃Al, U₃As, Mn₃Ga, Th₃Si,Rh₃Be, Ni₃Be, Mn₃Ge, Cr₃Ge, Pd₃Al, and Cr₃Ga.
 27. The method of claim25, wherein providing an alloy material comprising a substantiallyhomogeneous alloy of the at least one first element and the at least onesecond element directly adjacent one or more outermost boundaries of thediamond-containing material comprises providing the alloy materialdirectly adjacent opposing outermost boundaries of thediamond-containing material and the substrate, such that at least aportion of the alloy material intervenes between the diamond-containingmaterial and the substrate.
 28. The method of claim 25, whereinproviding an alloy material comprising a substantially homogeneous alloyof the at least one first element and the at least one second elementdirectly adjacent one or more outermost boundaries of thediamond-containing material comprises providing the alloy materialdirectly adjacent outermost boundaries of the diamond-containingmaterial, such that the alloy material does not substantially intervenebetween the diamond-containing material and the substrate.
 29. Themethod of claim 19, wherein converting portions of the homogenized alloywithin interstitial spaces between the inter-bonded diamond particlesinto a thermally stable material comprises forming the thermally stablematerial to comprise one or more of Sm₃SnC_(1-n), Sm₃BiC_(1-n),Sm₃TeC_(1-n), Sm₃PC_(1-n), Sm₃SiC_(1-n), Sm₃GaC_(1-n), Sc₃SnC_(1-n),Sc₃GeC_(1-n), Sc₃SbC_(1-n), Sc₃AsC_(1-n), Sm₃BeC_(1-n), Sc₃PC_(1-n),Sc₃SiC_(1-n), Y₃SnC_(1-n), Sc₃BiC_(1-n), Tm₃SnC_(1-n), Er₃SnC_(1-n),Sc₃TeC_(1-n), Y₃SbC_(1-n), Sc₃SeC_(1-n), Ho₃SnC_(1-n), Sc₃GaC_(1-n),Dy₃SnC_(1-n), Y₃BiC_(1-n), Tb₃SnC_(1-n), Tm₃SbC_(1-n), Er₃SbC_(1-n),Lu₃SbC_(1-n), Lu₃GeC_(1-n), Ti₃GaC_(1-n), Ti₃GeC_(1-n), Gd₃SnC_(1-n),Tb₃SbC_(1-n), Y₃GeC_(1-n), Er₃BiC_(1-n), Ho₃BiC_(1-n), Tm₃BiC_(1-n),Lu₃AsC_(1-n), Tm₃GeC_(1-n), Dy₃BiC_(1-n), Lu₃BiC_(1-n), Tm₃AsC_(1-n),Tb₃BiC_(1-n), Ti₃SnC_(1-n), Er₃AsC_(1-n), Ti₃SiC_(1-n), Y₃TeC_(1-n),Gd₃BiC_(1-n), Ce₃TeC_(1-n), Ti₃AlC_(1-n), Zr₃SnC_(1-n), Dy₃AsC_(1-n),La₃BiC_(1-n), Sc₃AlC_(1-n), Yb₃SeC_(1-n), Tb₃AsC_(1-n), Lu₃PC_(1-n),Yb₃TeC_(1-n), Lu₃SnC_(1-n), Eu₃SeC_(1-n), Er₃TeC_(1-n), Ti₃SbC_(1-n),Lu₃SiC_(1-n), Tm₃TeC_(1-n), Tm₃PC_(1-n), Gd₃TeC_(1-n), Gd₃AsC_(1-n),Zr₃SbC_(1-n), Lu₃GaC_(1-n), Er₃PC_(1-n), Sm₃BC_(1-n), Lu₃TeC_(1-n),Ho₃PC_(1-n), Tm₃SiC_(1-n), Er₃SiC_(1-n), Dy₃PC_(1-n), Tm₃GaC_(1-n),Ce₃AsC_(1-n), Y₃GaC_(1-n), Ho₃SiC_(1-n), Tb₃PC_(1-n), Er₃GaC_(1-n),Dy₃SiC_(1-n), Eu₃BiC_(1-n), Hf₃GaC_(1-n), Ho₃GaC_(1-n), Gd₃PC_(1-n),Gd₃SeC_(1-n), Lu₃AlC_(1-n), Ce₃SnC_(1-n), Tb₃SiC_(1-n), Hf₃SnC_(1-n),Dy₃GaC_(1-n), Tm₃AlC_(1-n-1), Gd₃SiC_(1-n), Ti₃BiC_(1-n), Tb₃GaC_(1-n),Er₃AlC_(1-n), Yb₃BiC_(1-n), Yb₃SbC_(1-n), La₃PC_(1-n), Eu₃AsC_(1-n),Fe₃AlC_(1-n), Ho₃AlC_(1-n), Gd₃GaC_(1-n), Yb₃AsC_(1-n), Th₃BiC_(1-n),Ac₃SbC_(1-n), Th₃SnC_(1-n), Tb₃AlC_(1-n), Eu₃PC_(1-n), Fe₃SiC_(1-n),Ti₃BeC_(1-n), Yb₃PC_(1-n), Gd₃AlC_(1-n), Hf₃PC_(1-n), V₃SiC_(1-n),Ce₃SiC_(1-n), V₃GeC_(1-n), Fe₃GaC_(1-n), Rh₃AlC_(1-n), Th₃GeC_(1-n),V₃AlC_(1-n), Fe₃GeC_(1-n), V₃GaC_(1-n), Th₃PC_(1-n), V₃SnC_(1-n),V₃SnC_(1-n), Fe₃SnC_(1-n), Zr₃BeC_(1-n), Hf₃BeC_(1-n), Nb₃GaC_(1-n),Sc₃BeC_(1-n), Th₃AlC_(1-n), V₃SbC_(1-n), Ce₃AlC_(1-n), Co₃AlC_(1-n),V₃AsC_(1-n), Ni₃AlC_(1-n), Co₃GaC_(1-n), Ti₃BC_(1-n), Rh₃GaC_(1-n),Fe₃BeC_(1-n), Fe₃SbC_(1-n), Sc₃BC_(1-n), U₃PC_(1-n), Fe₃PC_(1-n),Co₃SiC_(1-n), Hf₃BiC_(1-n), V₃BeC_(1-n), V₃TeC_(1-n), Ni₃GaC_(1-n),Lu₃BeC_(1-n), Mn₃AlC_(1-n), Ru₃AlC_(1-n), Fe₃AsC_(1-n), Ta₃SnC_(1-n),Mn₃SiC_(1-n), V₃SeC_(1-n), U₃SeC_(1-n), Co₃SnC_(1-n), Co₃BeC_(1-n),Co₃GeC_(1-n), Cr₃SiC_(1-n), V₃BiC_(1-n), Tc₃AlC_(1-n), La₃SiC_(1-n),Rh₃SnC_(1-n), Cr₃AlC_(1-n), U₃AsC_(1-n), Mn₃GaC_(1-n), Th₃SiC_(1-n),Rh₃BeC_(1-n), Ni₃BeC_(1-n), Mn₃GeC_(1-n), Cr₃GeC_(1-n), Pd₃AlC_(1-n),and Cr₃GaC_(1-n), wherein 0≤n≤0.75.
 30. The method of claim 19, whereinconverting portions of the homogenized alloy within interstitial spacesbetween the inter-bonded diamond particles into a thermally stablematerial comprises forming the thermally stable material to furthercomprise an FCC L1₂ phase precipitate, an FCC DO₂₂ phase precipitate, aD8₅ phase precipitate, a DO₁₉ phase precipitate, a BCC/B2 phaseprecipitate, and an FCC L1₀ phase precipitate.
 31. The method of claim19, further comprising solution treating the thermally stable materialto decompose the one or more carbide precipitates thereof into one ormore FCC L1₂ phase precipitates.
 32. A supporting substrate for acutting element, comprising: a homogenized binder comprising C, W, atleast one element selected from Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Y,Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La,Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, andU, and at least one additional element selected from Al, Ga, Sn, Be, Bi,Te, Sb, Se, As, Ge, Si, B, and P; and WC particles dispersed in thehomogenized binder.
 33. The supporting substrate of claim 32, whereinthe homogenized binder comprises a substantially homogeneous peritecticalloy having a melting temperature within a range of from about 750° C.to about 1500° C.
 34. A method of forming the supporting substrate ofclaim 32, comprising: forming a precursor composition comprisingdiscrete WC particles, a binding agent, and discrete particlescomprising the at least one element, the at least one additionalelement, and at least one further element selected from C and W; andsubjecting the precursor composition to a consolidation process to formthe homogenized binder.
 35. The method of claim 34, wherein forming aprecursor composition comprises forming the precursor composition tocomprise the discrete WC particles, the binding agent, and discretealloy particles individually comprising the at least one element, the atleast one additional element, and the at least one further element. 36.The method of claim 34, wherein forming the precursor compositioncomprises forming the precursor composition to comprise from about 5 wt% to about 15 wt % of the discrete particles, and from about 85 wt % toabout 95 wt % of the discrete WC particles.
 37. The method of claim 34,wherein forming a precursor composition comprises forming the precursorcomposition to comprise the discrete WC particles, the binding agent,discrete elemental particles of the at least one element, discreteelemental particles of the at least one additional element, and discreteelemental particles of the at least one further element.
 38. The methodof claim 34, wherein subjecting the precursor composition to aconsolidation process comprises: forming the precursor composition intoa green structure through at least one shaping and pressing process;removing the binding agent from and partially sintering the greenstructure to form a brown structure; and subjecting the brown structureto a densification process.
 39. The method of claim 38, whereinsubjecting the brown structure to a densification process comprisessubjecting the brown structure to one or more of a sintering process, aHIP process, a sintered-HIP process, and a hot pressing process.
 40. Themethod of claim 34, further comprising performing at least onesupplemental homogenization process to substantially completelyhomogenize the homogenized binder.